Method for Preparing an Organic Semiconducting Layer, a Composition for Use Therein and an Organic Electronic Device

    公开(公告)号:US20220131115A1

    公开(公告)日:2022-04-28

    申请号:US17428793

    申请日:2020-02-05

    Applicant: Novaled GmbH

    Abstract: The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C10-C30 condensed aryl group and/or at least one unsubstituted or substituted C3-C30 heteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a C1 to C22 silyl group, (iv) a C1 to C30 alkyl group, (v) a C1 to C10 alkylsilyl group, (vi) a C6 to C22 arylsilyl group, (vii) a C3 to C30 cycloalkyl group, (viii) a C2 to C30 heterocycloalkyl group, (ix) a C6 to C30 aryl group, (x) a C2 to C30 heteroaryl group, (xi) a C1 to C30 perfluoro-hydrocarbyl group, or (xii) a C1 to C10 trifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ≥0 and ≤2 Debye; and ii) a molecular weight in the range of ≥400 and ≤1,800; and bb) a metal borate compound; b) transferring the first composition from the solid phase into the gas phase in a vacuum chamber; and c) depositing the first composition on a substrate to form the organic semiconducting layer, a composition for use therein, and an organic electronic device prepared this way.

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