摘要:
Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.
摘要:
Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.
摘要:
Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.
摘要:
An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.
摘要:
Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.
摘要:
Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要:
Provided is an optical coupler. The optical coupler includes a lower cladding layer on a substrate, a core layer on the lower cladding layer, the core layer comprising a diffraction grating coupler and an optical waveguide, and an upper cladding layer on the core layer. The upper cladding layer has a thickness of about one quarter of a wavelength of an optical signal passing through the core layer divided by a refractive index of the first upper cladding layer. Thus, Fresnel reflection may be minimized, and also, it may prevent a Fabry-Perot interferometer from occurring.
摘要:
Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.
摘要:
An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.
摘要:
Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.