公开(公告)号：US20100301448A1

公开(公告)日：2010-12-02

申请号：US12847974

申请日：2010-07-30

Applicant: O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

Inventor： O-Kyun KWON ,  Dong-Woo Suh ,  Junghyung Pyo ,  Gyung-Ock Kim

IPC: H01L27/12

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20090152673A1

公开(公告)日：2009-06-18

申请号：US12130877

申请日：2008-05-30

Applicant: O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

Inventor： O-Kyun KWON ,  Dong-Woo SUH ,  Junghyung PYO ,  Gyung-Ock KIM

IPC: H01L23/482 ,  H01L21/76

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Abstract translation: 提供半导体及其形成方法。 该方法包括在衬底中局部形成掩埋绝缘层。 蚀刻衬底以形成露出掩埋绝缘层的开口，并且在掩埋绝缘层上形成从衬底至少一个方向间隔开的硅图案。 形成第一绝缘层以包围硅图案。

公开(公告)号：US20090154517A1

公开(公告)日：2009-06-18

申请号：US12118551

申请日：2008-05-09

Applicant: Young-Ahn LEEM ,  Ki-Soo KIM ,  Jung-Ho SONG ,  O-Kyun KWON ,  Gyung-Ock KIM

Inventor： Young-Ahn LEEM ,  Ki-Soo KIM ,  Jung-Ho SONG ,  O-Kyun KWON ,  Gyung-Ock KIM

IPC: H01S5/125

CPC classification number: H01S5/026 ,  H01S5/0215 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/12 ,  H01S5/32333

Abstract: Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.

Abstract translation: 提供了用于单模操作的混合激光二极管和用于制造混合激光二极管的方法。 混合激光二极管包括硅层，设置在硅层上的有源图案以及设置在硅层和活性图案之间的结合层。 这里，结合层包括构成布拉格光栅的衍射图案。

公开(公告)号：US20090148115A1

公开(公告)日：2009-06-11

申请号：US12111884

申请日：2008-04-29

Applicant: Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

Inventor： Jong-Moo LEE ,  Duk-Jun KIM ,  O-Kyun KWON ,  Gyung-Ock KIM

IPC: G02B6/10

CPC classification number: G02B6/12007

Abstract: A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number.

Abstract translation: 提供了一种波导结构。 波导结构包括：缝隙通道波导，包括第一和第二图案，它们彼此间隔开以限定狭槽; 覆盖所述槽道波导的至少一部分的第一上层; 以及覆盖槽道波导的剩余部分的第二上层。 通道波导的热光系数（TOC）乘以第二上层的TOC是负数。

公开(公告)号：US20150063832A1

公开(公告)日：2015-03-05

申请号：US14012384

申请日：2013-08-28

Applicant: Mi-Ran PARK ,  Jong Sool JEONG ,  Hyun Soo KIM ,  Byungseok CHOI ,  Young Tak HAN ,  O-Kyun KWON

Inventor： Mi-Ran PARK ,  Jong Sool JEONG ,  Hyun Soo KIM ,  Byungseok CHOI ,  Young Tak HAN ,  O-Kyun KWON

IPC: H04B10/60 ,  H04J14/02

CPC classification number: G02B6/4274 ,  G02B6/4249 ,  G02B6/4263 ,  G02B6/4279

Abstract: Disclosed is a multi-channel receiver optical sub assembly. The a multi-channel receiver optical sub assembly includes: a multi-channel PD array, in which a plurality of photodiodes (PDs) disposed on a first capacitor, and including receiving areas disposed at centers thereof and anode electrode pads arranged in an opposite direction at an angle of 180 degrees based on the receiving areas between the adjacent PDs is monolithically integrated; a plurality of transimpedance amplifiers (TIAs) arranged on a plurality of second capacitors, respectively, and connected with the anode pads of the respective PDs through wire bonding; a submount on which the first capacitor.

Abstract translation: 公开了一种多通道接收机光学子组件。 多通道接收机光学子组件包括：多通道PD阵列，其中设置在第一电容器上的多个光电二极管（PD），并且包括设置在其中心处的接收区域和布置在相反方向的阳极电极焊盘 基于相邻PD之间的接收区域以180度的角度被整体地集成; 分别布置在多个第二电容器上并通过引线接合与相应PD的阳极焊盘连接的多个跨阻抗放大器（TIA）; 第一电容器的基座。

公开(公告)号：US20100158427A1

公开(公告)日：2010-06-24

申请号：US12640627

申请日：2009-12-17

Applicant: Byung-Seok CHOI ,  Dae Kon OH ,  O-Kyun KWON ,  Dong Churl KIM ,  Kisoo KIM ,  Hyun Soo KIM

Inventor： Byung-Seok CHOI ,  Dae Kon OH ,  O-Kyun KWON ,  Dong Churl KIM ,  Kisoo KIM ,  Hyun Soo KIM

IPC: G02F1/035

CPC classification number: H01S5/50 ,  G02F1/2955 ,  G02F2001/0155 ,  G02F2001/0156 ,  G02F2202/06 ,  G02F2202/101 ,  G02F2202/102 ,  G02F2203/02 ,  G02F2203/15 ,  G02F2203/20 ,  G02F2203/70

Abstract: An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition.

Abstract translation: 光放大器包括无源波导区域和有源波导区域。 无源波导区域被配置为接收入射光信号并调整光信号的模式。 有源波导区域被集成到无源波导区域，并被配置为响应于施加到有源波导区域的电流改变载波的密度，对从无源波导区域接收的光信号执行增益调制。 有源波导区域的内部损耗被调节以产生共振效应，从而增加有源波导的带宽。 因此，光放大器可以在低电流条件下具有宽带宽。

公开(公告)号：US20110150016A1

公开(公告)日：2011-06-23

申请号：US12973481

申请日：2010-12-20

Applicant: Mi-Ran PARK ,  O-Kyun KWON ,  byung-seok CHOI ,  Dae Kon OH

Inventor： Mi-Ran PARK ,  O-Kyun KWON ,  byung-seok CHOI ,  Dae Kon OH

IPC: H01S3/10

CPC classification number: H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

Abstract: Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

Abstract translation: 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。