公开(公告)号：US20190010398A1

公开(公告)日：2019-01-10

申请号：US16026169

申请日：2018-07-03

Applicant: OCI COMPANY LTD.

Inventor： HoSeong YOO ,  JunEun LEE ,  PyongHwa JANG ,  YongIl KIM ,  Jin PARK

IPC: C09K13/06 ,  H01L21/311

Abstract: The present invention relates to an etching composition, an etching method, and a method of preparing a semiconductor device using the same, and more particularly, to an etching composition comprising a compound capable of selectively removing a nitride film with a high selectivity while minimizing an etch rate of the oxide film, and a method of preparing a semiconductor device comprising an etching process using the etching composition.