公开(公告)号：US20230141427A1

公开(公告)日：2023-05-11

申请号：US18054439

申请日：2022-11-10

Applicant: OCI Company Ltd.

Inventor： Gabok KIM ,  Byungchang KANG ,  Byunghyun PARK ,  Junki JEON ,  Changwon JEONG ,  Seungan CHYUN

IPC: C30B25/10 ,  C30B25/18 ,  C30B29/36

CPC classification number: C30B25/10 ,  C30B25/18 ,  C30B29/36

Abstract: A method of preparing a high-purity silicon carbide (SiC) crystal, and more specifically, to a method of preparing high-purity SiC having an extremely low impurity content in an excellent yield and in large quantities. The method including preparing a reactor containing a reaction chamber; heating the conductive heating element in the reaction chamber; mixing a silicon precursor, a carbon precursor, and a carrier gas; injecting the mixed gas into the reaction chamber, depositing SiC on the conductive heating element and harvesting the deposited SiC crystals.