公开(公告)号：US10269850B2

公开(公告)日：2019-04-23

申请号：US15717047

申请日：2017-09-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US09806117B2

公开(公告)日：2017-10-31

申请号：US15071035

申请日：2016-03-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US20180033811A1

公开(公告)日：2018-02-01

申请号：US15717047

申请日：2017-09-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.

公开(公告)号：US20170271384A1

公开(公告)日：2017-09-21

申请号：US15071035

申请日：2016-03-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Yi Ma

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material, and a through-semiconductor-via coupled to a negative voltage source. Deep trench isolation structures are disposed between individual photodiodes in the plurality of photodiodes to electrically and optically isolate the individual photodiodes. The deep trench isolation structures include a conductive material coupled to the through-semiconductor-via, and a dielectric material disposed on sidewalls of the deep trench isolation structures between the semiconductor material and the conductive material.