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    Image sensor having a source follower transistor with a multi-thickness gate dielectric
    1.
    发明授权
    Image sensor having a source follower transistor with a multi-thickness gate dielectric 有权

    公开(公告)号：US10964738B2

    公开(公告)日：2021-03-30

    申请号：US16149544

    申请日：2018-10-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant ,  Eric Webster ,  Sing-Chung Hu

    IPC: H01L27/146 ,  H04N5/378 ,  H04N9/04

    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.

    Vertical overflow drain combined with vertical transistor
    2.
    发明授权
    Vertical overflow drain combined with vertical transistor 有权

    公开(公告)号：US10734434B2

    公开(公告)日：2020-08-04

    申请号：US15984136

    申请日：2018-05-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N5/359 ,  H04N5/378

    Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

    BLUE ENHANCED IMAGE SENSOR
    4.
    发明申请
    BLUE ENHANCED IMAGE SENSOR 有权
    蓝增强图像传感器

    公开(公告)号：US20160211295A1

    公开(公告)日：2016-07-21

    申请号：US14601010

    申请日：2015-01-20

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

    Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

    Pixel cell having anti-blooming structure and image sensor
    5.
    发明授权
    Pixel cell having anti-blooming structure and image sensor 有权

    公开(公告)号：US12262563B2

    公开(公告)日：2025-03-25

    申请号：US17701632

    申请日：2022-03-22

    Applicant: Omnivision Technologies, Inc.

    Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

    IPC: H10F39/18

    Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

    Pixel Cell Having Anti-Blooming Structure and Image Sensor
    6.
    发明公开
    Pixel Cell Having Anti-Blooming Structure and Image Sensor 审中-公开

    公开(公告)号：US20230307484A1

    公开(公告)日：2023-09-28

    申请号：US17701632

    申请日：2022-03-22

    Applicant: Omnivision Technologies, Inc.

    Inventor： Shiyu Sun ,  Yuanwei Zheng ,  Gang Chen ,  Sing-Chung Hu ,  Armin Yazdani

    IPC: H01L27/146

    CPC classification number: H01L27/14656

    Abstract: A pixel cell is formed on a semiconductor substrate having a front surface. The pixel cell includes a photodiode, a floating diffusion region, and a transfer gate. The photodiode is disposed in the semiconductor substrate. The floating diffusion region includes a first doped region disposed in the semiconductor substrate, wherein the first doped region extends from the front surface to a first junction depth in the semiconductor substrate. The transfer gate is configured to selectively couple the photodiode to the floating diffusion region controlling charge transfer between the photodiode and the floating diffusion region. The transfer gate includes a planar gate disposed on the front surface of the semiconductor substrate and a pair of vertical gate electrodes. Each vertical gate electrode extending a gate depth from the planar gate into the semiconductor substrate. The first junction depth is greater than the gate depth.

    TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH
    7.
    发明申请
    TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH 有权

    公开(公告)号：US20210305299A1

    公开(公告)日：2021-09-30

    申请号：US16830086

    申请日：2020-03-25

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng

    IPC: H01L27/146

    Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner trench structures formed in the semiconductor substrate between the nonplanar structure and a respective one of the two outer trench structures. This structure creates an electron channel extending along a plurality of sidewall portions of the nonplanar structure in a channel width plane.

    Resonant-filter image sensor and associated fabrication method
    8.
    发明授权
    Resonant-filter image sensor and associated fabrication method 有权

    公开(公告)号：US10566364B2

    公开(公告)日：2020-02-18

    申请号：US16276561

    申请日：2019-02-14

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

    Transistors having increased effective channel width
    10.
    发明授权
    Transistors having increased effective channel width 有权

    公开(公告)号：US12289924B2

    公开(公告)日：2025-04-29

    申请号：US18177494

    申请日：2023-03-02

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng ,  Bill Phan

    IPC: H10F39/18 ,  H01L21/762 ,  H10D30/01 ,  H10D30/62 ,  H10D64/27 ,  H10F39/00

    Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.

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