公开(公告)号：US10199242B2

公开(公告)日：2019-02-05

申请号：US15315864

申请日：2015-12-28

Applicant: TOHO ENGINEERING CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Eisuke Suzuki ,  Kazuto Yamauchi ,  Tatsutoshi Suzuki ,  Daisuke Suzuki

IPC: H01L21/67 ,  H01L21/02 ,  B01J35/02 ,  B01J23/42 ,  H01L21/302 ,  H01L21/306 ,  H01L29/16 ,  H01L29/20

Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.

公开(公告)号：US10665480B2

公开(公告)日：2020-05-26

申请号：US16227270

申请日：2018-12-20

Applicant: TOHO ENGINEERING CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Eisuke Suzuki ,  Kazuto Yamauchi ,  Tatsutoshi Suzuki ,  Daisuke Suzuki

IPC: H01L21/67 ,  H01L21/302 ,  H01L21/306 ,  H01L29/16 ,  B01J23/42 ,  B01J35/02 ,  H01L21/02 ,  H01L29/20

Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.

公开(公告)号：US11220757B2

公开(公告)日：2022-01-11

申请号：US14363090

申请日：2012-12-05

Applicant: OSAKA UNIVERSITY

Inventor： Kazuto Yamauchi

IPC: C25F3/16 ,  B24B37/04 ,  C25F3/26 ,  C30B29/16

Abstract: Provided is a method for manufacturing a solid oxide and a device therefor, capable of manufacturing a solid oxide used as an optical material without introducing damaged layers caused by machining, which does not use any polishing agent or abrasive grains including rare earth elements, or does not use any solution, such as hydrogen fluoride, for which handling is difficult and which imposes a heavy environmental burden. In the presence of water 1, a solid oxide in which one or more kinds of elements are bonded through oxygen is used as an object to be manufactured; a catalyst substance, which cuts a backbond between an oxygen element and another element, forming the solid oxide, by dissociation of a water molecule, and adsorbs it, and helps production of a decomposition product by hydrolysis, is used as a machining reference surface (3); the object (5) to be manufactured and the machining reference surface are disposed so that they are brought into contact with each other or they are brought very close to each other in the presence of water; a potential of the machining reference surface is adjusted to a range where neither H2 nor O2 is produced; and the object to be manufactured is moved relative to the machining reference surface thereby to remove a decomposition product from the surface of the object to be manufactured.

公开(公告)号：US10163645B2

公开(公告)日：2018-12-25

申请号：US15125308

申请日：2015-03-11

Applicant: OSAKA UNIVERSITY ,  TOHO Engineering Co., Ltd.

Inventor： Kazuto Yamauchi ,  Ai Isohashi ,  Yasuhisa Sano

IPC: H01L21/306 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/302 ,  H01L21/04 ,  H01L21/67 ,  H01L29/16

Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

公开(公告)号：US20140326612A1

公开(公告)日：2014-11-06

申请号：US14363090

申请日：2012-12-05

Applicant: OSAKA UNIVERSITY

Inventor： Kazuto Yamauchi

IPC: C25F3/16

CPC classification number: C25F3/16 ,  B24B37/046 ,  C30B29/16

Abstract: Provided is a method for manufacturing a solid oxide and a device therefor, capable of manufacturing a solid oxide used as an optical material without introducing damaged layers caused by machining, which does not use any polishing agent or abrasive grains including rare earth elements, or does not use any solution, such as hydrogen fluoride, for which handling is difficult and which imposes a heavy environmental burden. In the presence of water 1, a solid oxide in which one or more kinds of elements are bonded through oxygen is used as an object to be manufactured; a catalyst substance, which cuts a backbond between an oxygen element and another element, forming the solid oxide, by dissociation of a water molecule, and adsorbs it, and helps production of a decomposition product by hydrolysis, is used as a machining reference surface (3); the object (5) to be manufactured and the machining reference surface are disposed so that they are brought into contact with each other or they are brought very close to each other in the presence of water; a potential of the machining reference surface is adjusted to a range where neither H2 nor O2 is produced; and the object to be manufactured is moved relative to the machining reference surface thereby to remove a decomposition product from the surface of the object to be manufactured.

Abstract translation: 提供一种固体氧化物的制造方法及其制造方法，其能够制造用作光学材料的固体氧化物，而不会引入不使用任何抛光剂或包括稀土元素的磨粒的机械加工引起的损伤层，或者 不使用任何解决方案，如氟化氢，处理难度大，环境负担较重。 在水1的存在下，使用其中一种或多种元素通过氧键接合的固体氧化物作为制造对象; 催化剂物质，其通过水分子的解离和吸附来切割氧元素和另一元素之间的背界，形成固体氧化物，并且通过水解来帮助分解产物的产生被用作加工参考表面（ 3）; 要制造的物体（5）和加工参考表面被设置为使得它们彼此接触或者在水的存在下彼此非常接近; 将加工基准面的电位调整为不产生H2和O2的范围; 并且要制造的物体相对于加工基准表面移动，从而从待制造物体的表面除去分解产物。