公开(公告)号：US10770506B2

公开(公告)日：2020-09-08

申请号：US15823431

申请日：2017-11-27

Applicant: OSRAM OLED GMBH

Inventor： Norwin Von Malm ,  Martin Mandl ,  Alexander F. Pfeuffer ,  Britta Goeoetz

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/075 ,  H01L29/66 ,  H01L29/78 ,  H01L33/12 ,  H01L33/50

Abstract: In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •A) providing a growth substrate (2); •B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •C) producing a plurality of separate growth points (45) on or at the buffer layer (4); •D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

公开(公告)号：US12176464B2

公开(公告)日：2024-12-24

申请号：US16753366

申请日：2018-09-26

Applicant: Osram OLED GmbH

Inventor： Christoph Schwarzmaier ,  Martin Mandl ,  Robert Walter ,  Roland Stieglmeier ,  Michael Schmal

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/46

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

公开(公告)号：US20200274031A1

公开(公告)日：2020-08-27

申请号：US16753366

申请日：2018-09-26

Applicant: Osram OLED GmbH

Inventor： Christoph Schwarzmaier ,  Martin Mandl ,  Robert Walter ,  Roland Stieglmeier ,  Michael Schmal

IPC: H01L33/40 ,  H01L33/00 ,  H01L33/46

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.