公开(公告)号：US11329193B2

公开(公告)日：2022-05-10

申请号：US16757702

申请日：2018-10-19

Applicant: OSRAM OLED GmbH

Inventor： Xiaojun Chen ,  Alexander Frey ,  Philipp Drechsel ,  Thomas Lehnhardt ,  Lise Lahourcade ,  Jürgen Off

IPC: H01L33/22 ,  H01L33/24 ,  H01L33/00 ,  H01L33/02 ,  H01L33/12 ,  H01L33/32

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

公开(公告)号：US11626531B2

公开(公告)日：2023-04-11

申请号：US16643463

申请日：2018-08-24

Applicant: OSRAM OLED GmbH

Inventor： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn ,  Ingrid Koslow

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/32

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

公开(公告)号：US11502224B2

公开(公告)日：2022-11-15

申请号：US16624911

申请日：2018-06-14

Applicant: OSRAM OLED GmbH

Inventor： Ingrid Koslow ,  Massimo Drago ,  Joachim Hertkorn ,  Alexander Frey

IPC: H01L33/30 ,  H01L31/0304 ,  H01L33/00 ,  H01L31/18

Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

公开(公告)号：US20200381579A1

公开(公告)日：2020-12-03

申请号：US16643463

申请日：2018-08-24

Applicant: OSRAM OLED GmbH

Inventor： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn ,  Ingrid Koslow

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/32

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.