公开(公告)号：US20210265531A1

公开(公告)日：2021-08-26

申请号：US17315198

申请日：2021-05-07

Applicant: OSRAM OLED GmbH

Inventor： Werner Bergbauer ,  Joachim Hertkorn ,  Alexander Walter

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/14 ,  H01L33/00

Abstract: A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.

公开(公告)号：US20210028223A1

公开(公告)日：2021-01-28

申请号：US17040084

申请日：2019-03-22

Applicant: Osram OLED GmbH

Inventor： Christian Mueller ,  Dominik Scholz ,  Joachim Hertkorn

IPC: H01L27/15

Abstract: An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.

公开(公告)号：US11626531B2

公开(公告)日：2023-04-11

申请号：US16643463

申请日：2018-08-24

Applicant: OSRAM OLED GmbH

Inventor： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn ,  Ingrid Koslow

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/32

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

公开(公告)号：US11616164B2

公开(公告)日：2023-03-28

申请号：US16955560

申请日：2019-01-17

Applicant: OSRAM OLED GmbH

Inventor： Philipp Drechsel ,  Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/12

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

公开(公告)号：US11502224B2

公开(公告)日：2022-11-15

申请号：US16624911

申请日：2018-06-14

Applicant: OSRAM OLED GmbH

Inventor： Ingrid Koslow ,  Massimo Drago ,  Joachim Hertkorn ,  Alexander Frey

IPC: H01L33/30 ,  H01L31/0304 ,  H01L33/00 ,  H01L31/18

Abstract: A semiconductor body main include a III-V compound semiconductor material having a p-conductive region doped with a p-dopant. The p-conductive region may include at least one first section, one second section, and one third section. The second section may be arranged between the first and third sections. The second section may directly adjoin the first and third sections. An indium concentration of at least one of the sections differs from an indium concentration of the other two sections.

公开(公告)号：US20200335658A1

公开(公告)日：2020-10-22

申请号：US16955560

申请日：2019-01-17

Applicant: OSRAM OLED GmbH

Inventor： Philipp Drechsel ,  Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/12

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

公开(公告)号：US11677045B2

公开(公告)日：2023-06-13

申请号：US17315198

申请日：2021-05-07

Applicant: OSRAM OLED GmbH

Inventor： Werner Bergbauer ,  Joachim Hertkorn ,  Alexander Walter

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/325 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32

Abstract: A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.

公开(公告)号：US20200381579A1

公开(公告)日：2020-12-03

申请号：US16643463

申请日：2018-08-24

Applicant: OSRAM OLED GmbH

Inventor： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn ,  Ingrid Koslow

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/32

Abstract: A semiconductor body and a method for producing a semiconductor body are disclosed. In an embodiment a semiconductor body includes a p-conducting region, wherein the p-conducting region has at least one barrier zone and a contact zone, wherein the barrier zone has a first magnesium concentration and a first aluminum concentration, wherein the contact zone has a second magnesium concentration and a second aluminum concentration, wherein the first aluminum concentration is greater than the second aluminum concentration, wherein the first magnesium concentration is at least ten times less than the second magnesium concentration, wherein the contact zone forms an outwardly exposed surface of the semiconductor body, and wherein the barrier zone adjoins the contact zone, and wherein the semiconductor body is based on a nitride compound semiconductor material.

公开(公告)号：US10720549B2

公开(公告)日：2020-07-21

申请号：US16319454

申请日：2017-09-04

Applicant: OSRAM OLED GmbH

Inventor： Werner Bergbauer ,  Joachim Hertkorn

IPC: H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01S5/34 ,  H01S5/343 ,  H01S5/20

Abstract: In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.