公开(公告)号：US10910516B2

公开(公告)日：2021-02-02

申请号：US16660449

申请日：2019-10-22

Applicant: OSRAM OLED GMBH

Inventor： Alvaro Gomez-Iglesias ,  Asako Hirai

IPC: H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343 ,  H01L33/14 ,  H01L33/00

Abstract: The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). Each injection region (2) passes at least partly through the active layer (11) starting from the first layer (10). Furthermore, each injection region (2) is laterally surrounded by a continuous path of the active layer (11), the active layer (11) being doped less in the path than in the injection region (2) or oppositely thereto. During the operation of the semiconductor element (100), charge carriers reach the injection regions (2) at least partly from the first layer (10) and are directly injected into the active layer (11) from there.

公开(公告)号：US11495939B2

公开(公告)日：2022-11-08

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

公开(公告)号：US20210006033A1

公开(公告)日：2021-01-07

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/02

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.