公开(公告)号：US11894493B2

公开(公告)日：2024-02-06

申请号：US16964219

申请日：2019-01-15

Applicant: OSRAM OLED GmbH

Inventor： Korbinian Perzlmaier ,  Stefan Illek

IPC: H01L33/46 ,  H01L33/56 ,  H01L33/48

CPC classification number: H01L33/465 ,  H01L33/56 ,  H01L33/486

Abstract: A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

公开(公告)号：US11495939B2

公开(公告)日：2022-11-08

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

公开(公告)号：US11177414B2

公开(公告)日：2021-11-16

申请号：US16630495

申请日：2018-07-12

Applicant: Osram OLED GmbH

Inventor： Tansen Varghese ,  Stefan Illek

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/30 ,  H01L33/38

Abstract: An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

公开(公告)号：US20210006033A1

公开(公告)日：2021-01-07

申请号：US16977888

申请日：2019-03-05

Applicant: OSRAM OLED GmbH

Inventor： Bruno Jentzsch ,  Alvaro Gomez-Iglesias ,  Alexander Tonkikh ,  Stefan Illek

IPC: H01S5/026 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/02

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

公开(公告)号：US10672749B2

公开(公告)日：2020-06-02

申请号：US15574926

申请日：2016-05-17

Applicant: OSRAM OLED GmbH

Inventor： Matthias Goldbach ,  Juergen Holz ,  Stefan Illek ,  Stefan Groetsch

IPC: H01L25/16 ,  H01L25/075 ,  H01L23/00 ,  H01L33/62

Abstract: A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.