公开(公告)号：US10630057B2

公开(公告)日：2020-04-21

申请号：US16092495

申请日：2017-03-27

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Georg Brüderl

IPC: H01S5/32 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.

公开(公告)号：US11935755B2

公开(公告)日：2024-03-19

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01L21/268 ,  H01L33/00 ,  H01S5/042

CPC classification number: H01L21/28575 ,  H01L21/268 ,  H01L33/005 ,  H01S5/04252 ,  H01S5/04254 ,  H01L21/28587 ,  H01L2933/0016 ,  H01S5/04256

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US10714901B2

公开(公告)日：2020-07-14

申请号：US16092495

申请日：2017-03-27

Applicant: OSRAM OLED GMBH

Inventor： Bernhard Stojetz ,  Georg Brüderl

IPC: H01S5/32 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.

公开(公告)号：US20210111030A1

公开(公告)日：2021-04-15

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.