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公开(公告)号：US11935755B2
公开(公告)日：2024-03-19
申请号：US17126907
申请日：2020-12-18
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad Ali , Thomas Adlhoch
IPC分类号： H01L21/285 , H01L21/268 , H01L33/00 , H01S5/042
CPC分类号： H01L21/28575 , H01L21/268 , H01L33/005 , H01S5/04252 , H01S5/04254 , H01L21/28587 , H01L2933/0016 , H01S5/04256
摘要： A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.
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公开(公告)号：US20210367406A1
公开(公告)日：2021-11-25
申请号：US16954961
申请日：2018-12-14
申请人： OSRAM OLED GmbH
发明人： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
IPC分类号： H01S5/323 , H01S5/024 , H01S5/0237 , H01S5/40 , H01S5/22 , B23K26/122
摘要： In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.
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公开(公告)号：US11804696B2
公开(公告)日：2023-10-31
申请号：US16973458
申请日：2019-06-12
申请人： OSRAM OLED GmbH
发明人： Sven Gerhard , Christoph Eichler , Alfred Lell , Muhammad Ali
CPC分类号： H01S5/22 , H01S5/0202 , H01S5/026 , H01S5/0282 , H01S5/0424
摘要： A semiconductor laser (1) is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.
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公开(公告)号：US11411375B2
公开(公告)日：2022-08-09
申请号：US16637698
申请日：2018-08-21
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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公开(公告)号：US20240146034A1
公开(公告)日：2024-05-02
申请号：US18409474
申请日：2024-01-10
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Harald Koenig , Bernhard Stojetz , Muhammad Ali
IPC分类号： H01S5/40 , H01S5/0234 , H01S5/024 , H01S5/042 , H01S5/323
CPC分类号： H01S5/4031 , H01S5/0234 , H01S5/02461 , H01S5/02469 , H01S5/0421 , H01S5/32341 , H01S5/04254 , H01S5/22
摘要： In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.
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公开(公告)号：US11923662B2
公开(公告)日：2024-03-05
申请号：US17807272
申请日：2022-06-16
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
CPC分类号： H01S5/4031 , H01S5/0234 , H01S5/02461 , H01S5/02469 , H01S5/0421 , H01S5/32341 , H01S5/04254 , H01S5/22
摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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公开(公告)号：US20220311219A1
公开(公告)日：2022-09-29
申请号：US17807272
申请日：2022-06-16
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
IPC分类号： H01S5/40 , H01S5/024 , H01S5/042 , H01S5/323 , H01S5/0234
摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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公开(公告)号：US11942763B2
公开(公告)日：2024-03-26
申请号：US16954961
申请日：2018-12-14
申请人： OSRAM OLED GmbH
发明人： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
IPC分类号： H01S5/40 , B23K26/122 , H01S5/0237 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/02345
CPC分类号： H01S5/4031 , B23K26/122 , H01S5/0237 , H01S5/02469 , H01S5/02492 , H01S5/04254 , H01S5/22 , H01S5/32341 , H01S5/02345 , H01S5/04256
摘要： In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.
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公开(公告)号：US20210111030A1
公开(公告)日：2021-04-15
申请号：US17126907
申请日：2020-12-18
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Georg Brüderl , John Brückner , Sven Gerhard , Muhammad Ali , Thomas Adlhoch
IPC分类号： H01L21/285 , H01S5/042 , H01L33/00 , H01L21/268
摘要： A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.
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公开(公告)号：US20200295534A1
公开(公告)日：2020-09-17
申请号：US16637698
申请日：2018-08-21
申请人： OSRAM OLED GmbH
发明人： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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