公开(公告)号：US11837844B2

公开(公告)日：2023-12-05

申请号：US16961901

申请日：2018-12-27

Applicant: OSRAM OLED GmbH

Inventor： John Brückner ,  Urs Heine ,  Sven Gerhard ,  Lars Nähle ,  Andreas Löffler ,  André Somers

IPC: H01S5/02 ,  H01L21/304 ,  H01L21/302

CPC classification number: H01S5/0203 ,  H01S5/0206 ,  H01L21/302 ,  H01L21/304

Abstract: A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21). Further, each of the semiconductor components (20) comprises at least one of the semiconductor chips (22), and the expansion of the at least one break nucleus (23) in the vertical direction (z) is at least 1% of the expansion of the carrier (21) in the vertical direction (z). Furthermore, a semiconductor component (20) is specified.

公开(公告)号：US11935755B2

公开(公告)日：2024-03-19

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01L21/268 ,  H01L33/00 ,  H01S5/042

CPC classification number: H01L21/28575 ,  H01L21/268 ,  H01L33/005 ,  H01S5/04252 ,  H01S5/04254 ,  H01L21/28587 ,  H01L2933/0016 ,  H01S5/04256

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US20210111030A1

公开(公告)日：2021-04-15

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.