公开(公告)号：US20210265545A1

公开(公告)日：2021-08-26

申请号：US17262118

申请日：2019-08-07

Applicant: OSRAM OLED GmbH

Inventor： Ivar Tångring ,  Markus Richter

IPC: H01L33/62 ,  H01L25/16 ,  H01L27/15 ,  H01L33/46 ,  H01L33/00

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

公开(公告)号：US12261258B2

公开(公告)日：2025-03-25

申请号：US17262118

申请日：2019-08-07

Applicant: OSRAM OLED GmbH

Inventor： Ivar Tångring ,  Markus Richter

IPC: H01L33/62 ,  H01L25/16 ,  H01L27/15 ,  H01L33/00 ,  H01L33/46

Abstract: In an embodiment an optoelectronic component includes a semiconductor chip having an electrical contact, the semiconductor chip configured to emit primary electromagnetic radiation, a carrier having an electrically conductive coating on which the semiconductor chip with the electrical contact is arranged, a contact agent connecting the electrically conductive coating of the carrier and the electrical contact of the semiconductor chip with one another and a passivation layer arranged in places on the electrically conductive coating, wherein an outer surface of the electrically conductive coating is completely encapsulated by the passivation layer and the contact agent, wherein the passivation layer has a penetration, wherein the contact agent protrudes beyond the penetration in a lateral direction, and wherein the semiconductor chip is a flip chip.

公开(公告)号：US11611019B2

公开(公告)日：2023-03-21

申请号：US16635563

申请日：2018-07-20

Applicant: Osram OLED GmbH

Inventor： Ivar Tångring

IPC: H01L33/60 ,  H01L33/50 ,  H01L51/52 ,  H01L33/56

Abstract: An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

公开(公告)号：US11493702B2

公开(公告)日：2022-11-08

申请号：US16961771

申请日：2018-12-19

Applicant: OSRAM OLED GmbH

Inventor： Ivar Tångring ,  Rebecca Römer ,  Claudia Jurenka

IPC: H01L33/50 ,  H01L33/54 ,  G02B6/42

Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

公开(公告)号：US20200259051A1

公开(公告)日：2020-08-13

申请号：US16635563

申请日：2018-07-20

Applicant: Osram OLED GmbH

Inventor： Ivar Tångring

IPC: H01L33/50 ,  H01L33/60

Abstract: An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.