公开(公告)号：US11056857B2

公开(公告)日：2021-07-06

申请号：US16642610

申请日：2018-09-19

Applicant: OSRAM OLED GmbH

Inventor： Christoph Eichler ,  Matthias Peter ,  Jan Wagner

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/026 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1

公开(公告)号：US20200220330A1

公开(公告)日：2020-07-09

申请号：US16642610

申请日：2018-09-19

Applicant: OSRAM OLED GmbH

Inventor： Christoph Eichler ,  Matthias Peter ,  Jan Wagner

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20 ,  H01S5/30

Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1