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Patent Agency Ranking
公开(公告)号：US11527865B2
公开(公告)日：2022-12-13
申请号：US16641851
申请日：2018-08-10
Applicant: OSRAM OLED GmbH
Inventor： Matthias Peter , Teresa Wurm , Christoph Eichler
IPC: H01S5/042 , H01L31/0304 , H01S5/30 , H01S5/343 , H01L33/32
Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.
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公开(公告)号：US11557698B2
公开(公告)日：2023-01-17
申请号：US16072865
申请日：2017-01-17
Applicant: OSRAM OLED GMBH
Inventor： Andreas Loeffler , Adam Bauer , Matthias Peter , Michael Binder
Abstract: Disclosed is a conversion element (1) comprising an active region (13) that is formed by a semiconductor material and includes a plurality of barriers (131) and quantum troughs (132), a plurality of first structural elements (14) on a top face (la) of the conversion element (1), and a plurality of second structural elements (15) and/or third structural elements (16) which are arranged on a face of the active region (13) facing away from the plurality of first structural elements (14). Also disclosed is a method for producing a conversion element of said type.
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公开(公告)号：US20200220330A1
公开(公告)日：2020-07-09
申请号：US16642610
申请日：2018-09-19
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Matthias Peter , Jan Wagner
Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1
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公开(公告)号：US20200220325A1
公开(公告)日：2020-07-09
申请号：US16641851
申请日：2018-08-10
Applicant: OSRAM OLED GmbH
Inventor： Matthias Peter , Teresa Wurm , Christoph Eichler
IPC: H01S5/042 , H01L33/14 , H01L31/0304 , H01L31/0232 , H01S5/30 , H01S5/026 , H01S5/343
Abstract: An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.
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公开(公告)号：US11056857B2
公开(公告)日：2021-07-06
申请号：US16642610
申请日：2018-09-19
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Matthias Peter , Jan Wagner
Abstract: A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1
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