公开(公告)号：US10833231B2

公开(公告)日：2020-11-10

申请号：US16094870

申请日：2017-04-13

Applicant: OSRAM OLED GMBH

Inventor： Gertrud Kräuter ,  Matthias Loster ,  Kathy Schmidtke ,  Alan Piquette

IPC: H01L33/56 ,  C08G77/18 ,  C08J3/24 ,  C08K3/22 ,  C08K3/28 ,  C09D183/06 ,  C09K11/02 ,  C09K11/08 ,  H01L33/50

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method for producing an optoelectronic component includes providing a semiconductor capable of emitting primary radiation, providing an alkoxy-functionalized polyorganosiloxane resin and crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane, wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

公开(公告)号：US20210043813A1

公开(公告)日：2021-02-11

申请号：US16964937

申请日：2019-01-18

Applicant: OSRAM OLED GmbH

Inventor： Thomas Reeswinkel ,  Kathy Schmidtke

IPC: H01L33/56 ,  H01L33/62

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

公开(公告)号：US20210280749A1

公开(公告)日：2021-09-09

申请号：US17266061

申请日：2019-08-07

Applicant: OSRAM OLED GmbH

Inventor： Kathy Schmidtke ,  Tobias Gebuhr

IPC: H01L33/50 ,  H01L33/52 ,  H01L33/00

Abstract: A method for producing conversion elements, a conversion element, a method for producing a light-emitting semiconductor device, and a light-emitting semiconductor device are disclosed. In an embodiment a method for producing conversion elements includes providing a sapphire substrate, forming a conversion layer on a first main surface of the sapphire substrate, and separating the sapphire substrate and the conversion layer into a plurality of conversion elements.