公开(公告)号：US09914997B2

公开(公告)日：2018-03-13

申请号：US14772679

申请日：2014-03-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Andreas Koller ,  Alexander Behres

IPC: C23C16/18 ,  C23C16/448 ,  C23C16/52 ,  B01D1/14

CPC classification number: C23C16/4482 ,  B01D1/14 ,  C23C16/18 ,  C23C16/4481 ,  C23C16/52

Abstract: A method for supplying a process with an enriched carrier gas. A first apparatus and a second apparatus are provided. The first apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The second apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The first apparatus supplies the second apparatus with an enriched carrier gas. The second apparatus supplies the enriched carrier gas for the process. A temperature of the first apparatus is controlled as a function of a quantity of precursor in the second apparatus.

公开(公告)号：US20220131033A1

公开(公告)日：2022-04-28

申请号：US17435321

申请日：2020-02-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Koller ,  Bernd Mayer

IPC: H01L33/12 ,  H01L21/02 ,  H01L33/30

Abstract: In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 1015 cm−3 and 1019 cm−3, inclusive.