公开(公告)号：US20160276531A1

公开(公告)日：2016-09-22

申请号：US15034565

申请日：2014-11-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

IPC: H01L33/08 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

Abstract translation: 半导体层序列包括n导电n型侧，p导电p型侧和两侧之间的有源区，有源区同时产生具有第一波长的第一辐射和具有第二波长的第二辐射 所述有源区包括至少一个具有产生所述第一辐射的第一材料组成的辐射活性层，所述至少一个辐射活性层垂直于所述半导体层序列的生长方向定向，所述活性区包括 多个具有第二材料组合物和/或具有产生第二辐射的晶体结构的辐射活性管，该晶体结构偏离至少一个辐射活性层，并且辐射活性管平行于生长定向 方向，辐射活性管的平均直径为5nm至100nm，辐射活性管的平均表面密度为10 8 1 / cm 2至10 11 1 / cm 2。

公开(公告)号：US09653646B2

公开(公告)日：2017-05-16

申请号：US15034565

申请日：2014-11-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

IPC: H01L33/02 ,  H01L33/08 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.