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    Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips
    4.
    发明授权
    Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips 有权

    公开(公告)号：US10181547B2

    公开(公告)日：2019-01-15

    申请号：US14442394

    申请日：2013-11-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Petrus Sundgren ,  Markus Broell

    IPC: H01L33/00 ,  H01L21/00 ,  H01L33/14 ,  H01L33/40 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/30 ,  H01L33/38 ,  H01L33/32

    Abstract: An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

    SEMICONDUCTOR LAYER SEQUENCE AND METHOD OF PRODUCING THE SAME
    7.
    发明申请
    SEMICONDUCTOR LAYER SEQUENCE AND METHOD OF PRODUCING THE SAME 有权
    半导体层序列及其生产方法

    公开(公告)号：US20160276531A1

    公开(公告)日：2016-09-22

    申请号：US15034565

    申请日：2014-11-04

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

    IPC: H01L33/08 ,  H01L33/06 ,  H01L33/30 ,  H01L33/00 ,  H01L33/02

    CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

    Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

    Abstract translation: 半导体层序列包括n导电n型侧，p导电p型侧和两侧之间的有源区，有源区同时产生具有第一波长的第一辐射和具有第二波长的第二辐射 所述有源区包括至少一个具有产生所述第一辐射的第一材料组成的辐射活性层，所述至少一个辐射活性层垂直于所述半导体层序列的生长方向定向，所述活性区包括 多个具有第二材料组合物和/或具有产生第二辐射的晶体结构的辐射活性管，该晶体结构偏离至少一个辐射活性层，并且辐射活性管平行于生长定向 方向，辐射活性管的平均直径为5nm至100nm，辐射活性管的平均表面密度为10 8 1 / cm 2至10 11 1 / cm 2。

    Component with reduced absorption and method for producing a component
    10.
    发明授权
    Component with reduced absorption and method for producing a component 有权

    公开(公告)号：US12057522B2

    公开(公告)日：2024-08-06

    申请号：US17632892

    申请日：2020-07-23

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Tansen Varghese ,  Petrus Sundgren

    IPC: H01L33/08 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L33/08 ,  H01L33/005 ,  H01L33/62 ,  H01L2933/0066

    Abstract: Disclosed is method for making a component and a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer.

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