公开(公告)号：US20230288253A1

公开(公告)日：2023-09-14

申请号：US18040760

申请日：2021-08-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Reiner Windisch ,  Simon Lankes

IPC: G01J3/02 ,  G01J3/12 ,  G01J3/28

CPC classification number: G01J3/0291 ,  G01J3/021 ,  G01J3/0256 ,  G01J3/12 ,  G01J3/2803 ,  G01J2003/1226

Abstract: In an embodiment a detector for spectroscopy includes a housing comprises at least one aperture configured for supplying a light beam reflected or emitted from a target, the housing having at least one cross-sectional plane in which the at least one aperture comprises first and second non-contiguous intersecting surfaces, a detector arrangement with a detector surface configured for wavelength- and angle-dependent detection of light, the detector arrangement being arranged in the housing laterally spaced from the at least one aperture, a first reflector element arranged in the housing and a second reflector element opposite the detector surface, wherein the first reflector element is arranged in a beam path of the at least one aperture and is configured to direct a light beam incident through the at least one aperture onto the second reflector element, and wherein the second reflector element is configured to direct an incident light beam onto the detector surface.

公开(公告)号：US20220285912A1

公开(公告)日：2022-09-08

申请号：US17634741

申请日：2020-08-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Simon Lankes ,  Dennis Sprenger

IPC: H01S5/06 ,  H01S5/02255 ,  G02B5/20 ,  G02B1/00

Abstract: The invention relates to an optoelectronic component, comprising at least one semiconductor emitter having an active region designed for emitting electromagnetic radiation of a first wavelength range. The optoelectronic component also comprises at least one wavelength conversion plate, having a decoupling surface and a lateral surface arranged laterally to same and orientated transverse to same, as well as a substrate on which the semiconductor emitter and the wavelength conversion plate are arranged. The decoupling surface is facing away from the substrate. The semiconductor emitter is designed to irradiate the wavelength conversion plate with electromagnetic radiation on the lateral surface. The wavelength conversion plate is designed to emit a mixed radiation out of the decoupling surface, said mixed radiation comprising at least one portion of the radiation of the first wavelength range and a converted radiation of a second wavelength range.