公开(公告)号：US11931185B2

公开(公告)日：2024-03-19

申请号：US17440657

申请日：2020-03-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sergey Kudaev ,  Reiner Windisch ,  Dennis Sprenger ,  Ralph Wirth ,  Thomas Klafta

IPC: A61B5/00 ,  A61B5/024

CPC classification number: A61B5/7207 ,  A61B5/02427 ,  A61B5/6801 ,  A61B2562/12

Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

公开(公告)号：US10141483B2

公开(公告)日：2018-11-27

申请号：US15549364

申请日：2016-01-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Elmar Baur ,  Reiner Windisch ,  Frank Baumann

IPC: H01L33/50 ,  C09K11/08 ,  C09K11/77 ,  C09K11/64 ,  F21K9/23 ,  H01L25/075

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

公开(公告)号：US20190097106A1

公开(公告)日：2019-03-28

申请号：US16081176

申请日：2017-02-10

Applicant: OSRAM Opto Semiconductors GmbH ,  Heraeus Deutschland GmbH & Co. KG

Inventor： Eckhard Ditzel ,  Tihomir Klajic ,  Reiner Windisch ,  Andreas Biebersdorf

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H01L25/16 ,  H01L25/075 ,  H01L23/00

Abstract: A connection carrier, an optoelectronic component and a method for producing a connection carrier or an optoelectronic component are disclosed. In an embodiment a connection carrier includes a substrate, an electrically insulating connecting element, an electrically conductive contact element and an insulation element.

公开(公告)号：US10020429B2

公开(公告)日：2018-07-10

申请号：US14985644

申请日：2015-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Frank Baumann ,  Norbert Boenisch ,  Tim Fiedler ,  Frank Jermann ,  Stefan Lange ,  Reiner Windisch

IPC: C09K11/08 ,  C09K11/77 ,  H01L33/50 ,  C04B35/581 ,  C04B35/584

CPC classification number: H01L33/504 ,  C04B35/581 ,  C04B35/584 ,  C04B2235/3224 ,  C04B2235/3281 ,  C04B2235/3852 ,  C04B2235/444 ,  C04B2235/445 ,  C04B2235/446 ,  C09K11/0883 ,  C09K11/7728 ,  C09K11/7774 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a A3B5O12:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN3:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

公开(公告)号：US20190157250A1

公开(公告)日：2019-05-23

申请号：US16197939

申请日：2018-11-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Reiner Windisch ,  Florian Bösl ,  Andreas Dobner ,  Matthias Sperl

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/62

Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

公开(公告)号：US09583670B2

公开(公告)日：2017-02-28

申请号：US15036893

申请日：2014-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Rainer Butendeich ,  Hailing Cui ,  Reiner Windisch ,  Jörg Frischeisen ,  Stefan Lange

IPC: H01L33/00 ,  H01L33/44 ,  F21V9/16 ,  H01L25/075

CPC classification number: H01L33/00 ,  F21V9/30 ,  H01L25/0753 ,  H01L33/504 ,  H01L2933/0041 ,  H01L2933/0091

Abstract: A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.

Abstract translation: 用于主电磁辐射到次级电磁辐射的波长转换的发光转换元件包括第一发光材料颗粒，当第一电磁辐射激发时，发射第一电磁辐射，其峰值波长为至少515nm至至多550 nm的电磁光谱的绿色区域; 第二发光材料颗粒，当被主要电磁辐射激发时，其发射第二电磁辐射，其峰值波长为电磁光谱的黄色 - 红色区域的至少595nm至最多612nm; 以及第三发光材料颗粒，当被主电磁辐射激发时，其发射第三电磁辐射，其峰值波长为电磁光谱的红色区域的至少625nm至至多660nm。

公开(公告)号：US10886258B2

公开(公告)日：2021-01-05

申请号：US16197939

申请日：2018-11-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Reiner Windisch ,  Florian Bösl ,  Andreas Dobner ,  Matthias Sperl

IPC: H01L25/07 ,  H01L33/50 ,  H01L33/62 ,  H01L27/15 ,  H01L25/075 ,  F21K9/90 ,  F21V29/87 ,  F21Y115/10

Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

公开(公告)号：US10418530B2

公开(公告)日：2019-09-17

申请号：US15531349

申请日：2015-11-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Reiner Windisch ,  Joerg Erich Sorg ,  Ralph Wirth

IPC: H01L33/50 ,  H01L21/02 ,  H01L23/00 ,  H01L33/56 ,  H01L33/58

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.

公开(公告)号：US20160329470A1

公开(公告)日：2016-11-10

申请号：US15036893

申请日：2014-11-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Rainer Butendeich ,  Hailing Cui ,  Reiner Windisch ,  Jörg Frischeisen ,  Stefan Lange

IPC: H01L33/50 ,  H01L25/075

CPC classification number: H01L33/00 ,  F21V9/30 ,  H01L25/0753 ,  H01L33/504 ,  H01L2933/0041 ,  H01L2933/0091

Abstract: A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first luminescent material particles that, when excited by the primary electromagnetic radiation, emit a first electromagnetic radiation, a peak wavelength of which is at least 515 nm to at most 550 nm of a green region of the electromagnetic spectrum; second luminescent material particles that, when excited by the primary electromagnetic radiation, emit a second electromagnetic radiation, a peak wavelength of which is at least 595 nm to at most 612 nm of a yellow-red region of the electromagnetic spectrum; and third luminescent material particles that, when excited by the primary electromagnetic radiation, emit a third electromagnetic radiation, a peak wavelength of which is at least 625 nm to at most 660 nm of a red region of the electromagnetic spectrum.

Abstract translation: 用于主电磁辐射到次级电磁辐射的波长转换的发光转换元件包括第一发光材料颗粒，当第一电磁辐射激发时，发射第一电磁辐射，其峰值波长为至少515nm至至多550 nm的电磁光谱的绿色区域; 第二发光材料颗粒，当被主要电磁辐射激发时，其发射第二电磁辐射，其峰值波长为电磁光谱的黄色 - 红色区域的至少595nm至最多612nm; 以及第三发光材料颗粒，当被主电磁辐射激发时，其发射第三电磁辐射，其峰值波长为电磁光谱的红色区域的至少625nm至至多660nm。

公开(公告)号：US20140264422A1

公开(公告)日：2014-09-18

申请号：US14354098

申请日：2012-10-09

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Reiner Windisch ,  Hailing Cui ,  Gertrud Kraeuter ,  Markus Schneider

IPC: H01L33/50 ,  C09K11/02 ,  H01L33/58

CPC classification number: H01L33/504 ,  C09K11/025 ,  H01L33/501 ,  H01L33/56 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K.

Abstract translation: 在至少一个实施例中，光电子半导体部件包括光电子半导体芯片。 半导体部件包括转换元件，其被配置为将由半导体芯片发射的至少一些辐射转换成不同波长的辐射。 转换元件包括至少一种发光物质和散射粒子以及至少一种基质材料。 散射颗粒嵌入基质材料中。 在300K的温度下，基体材料和散射粒子的材料之间的折射率差异为0.15以下。 在380K的温度下，基体材料与散射粒子的材料之间的折射率之差大于300K的温度。