SEMICONDUCTOR LASER
    2.
    发明申请

    公开(公告)号:US20210399529A1

    公开(公告)日:2021-12-23

    申请号:US17291541

    申请日:2019-11-05

    Abstract: A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode. The laser diode and the photodiode are not connected to each other in a non-destructively detachable manner, and a non-destructively detachable connection is formed with a joining partner

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