公开(公告)号：US11031534B2

公开(公告)日：2021-06-08

申请号：US16471249

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Christian Müller

IPC: H01L33/62 ,  H01L29/06 ,  H01L33/02

Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

公开(公告)号：US09952322B2

公开(公告)日：2018-04-24

申请号：US14375620

申请日：2013-01-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dirk Sossenheimer ,  Christian Müller

IPC: G06F3/03 ,  G06F3/041 ,  G01S17/02 ,  G01S7/484 ,  G06F1/32

CPC classification number: G01S17/02 ,  G01S7/484 ,  G01S17/026 ,  G06F1/3231 ,  G06F3/0304 ,  G06F3/0412 ,  Y02D10/173

Abstract: A method of operating an optoelectronic proximity sensor including a radiation-emitting component, a radiation-detecting component and a control unit includes: operating the radiation-emitting component with a pulsed current, wherein the pulsed current of the radiation-emitting component has an on time and an off time during a measurement period, and causing the control unit to evaluate a detector signal of the radiation-detecting component during the on time and ending the on time if the detector signal exceeds a threshold value, wherein the ratio of the on time to the measurement period is less than 1/10.

公开(公告)号：US20150022474A1

公开(公告)日：2015-01-22

申请号：US14375620

申请日：2013-01-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dirk Sossenheimer ,  Christian Müller

IPC: G01S17/02 ,  G06F3/041 ,  G06F3/03

CPC classification number: G01S17/02 ,  G01S7/484 ,  G01S17/026 ,  G06F1/3231 ,  G06F3/0304 ,  G06F3/0412 ,  Y02D10/173

Abstract: A method of operating an optoelectronic proximity sensor including a radiation-emitting component, a radiation-detecting component and a control unit includes: operating the radiation-emitting component with a pulsed current, wherein the pulsed current of the radiation-emitting component has an on time and an off time during a measurement period, and causing the control unit to evaluate a detector signal of the radiation-detecting component during the on time and ending the on time if the detector signal exceeds a threshold value, wherein the ratio of the on time to the measurement period is less than 1/10.

Abstract translation: 一种操作包括辐射发射部件，辐射检测部件和控制单元的光电接近传感器的方法包括：用脉冲电流操作辐射发射部件，其中辐射发射部件的脉冲电流具有 时间和关闭时间，并且使得所述控制单元在所述接通时间期间评估所述放射线检测组件的检测器信号，并且如果所述检测器信号超过阈值则结束所述接通时间，其中所述接通时间 测量时间的时间小于1/10。

公开(公告)号：US20200091387A1

公开(公告)日：2020-03-19

申请号：US16471249

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Christian Müller

IPC: H01L33/62 ,  H01L33/02 ,  H01L29/06

Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.