公开(公告)号：US11935989B2

公开(公告)日：2024-03-19

申请号：US17611189

申请日：2020-05-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar ,  Roland Heinrich Enzmann

IPC: H01L33/38 ,  H01L31/0224 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42

CPC classification number: H01L33/387 ,  H01L31/022408 ,  H01L31/1856 ,  H01L33/0062 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.

公开(公告)号：US11031534B2

公开(公告)日：2021-06-08

申请号：US16471249

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Christian Müller

IPC: H01L33/62 ,  H01L29/06 ,  H01L33/02

Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

公开(公告)号：US11205885B2

公开(公告)日：2021-12-21

申请号：US16490171

申请日：2018-04-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Hubert Halbritter ,  Markus Bröll

IPC: H01S5/0233 ,  H01S5/023 ,  H01S5/02 ,  H01S5/40 ,  H01S5/0235 ,  H01S5/042

Abstract: A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

公开(公告)号：US20200091387A1

公开(公告)日：2020-03-19

申请号：US16471249

申请日：2018-03-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Heinrich Enzmann ,  Lorenzo Zini ,  Christian Müller

IPC: H01L33/62 ,  H01L33/02 ,  H01L29/06

Abstract: A radiation emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a carrier including a first main surface and a second main surface opposite to the first main surface, an n-doped layer and a p-doped layer forming a pn-junction and a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier, an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier and two electrical contacts disposed on a front side of the semiconductor chip.

公开(公告)号：US20190245326A1

公开(公告)日：2019-08-08

申请号：US16343989

申请日：2018-01-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Andreas Plößl ,  Roland Heinrich Enzmann ,  Martin Rudolf Behringer

IPC: H01S5/183 ,  H01S5/022 ,  H01S5/042 ,  H01S5/42

Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.