公开(公告)号：US20220128662A1

公开(公告)日：2022-04-28

申请号：US17438727

申请日：2020-03-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard STOJETZ ,  Harald KOENIG ,  Alfred LELL ,  Muhammad ALI

IPC: G01S7/481 ,  G02B27/09 ,  H01S5/024 ,  G02B26/10 ,  H01S5/00 ,  G01S17/931

Abstract: The invention relates to a device and a method for projecting a plurality of radiation points onto an object surface, comprising at least one radiation source for emitting electromagnetic radiation, comprising at least one beam path, via which the radiation emitted at least temporarily by the emitters is deflected in the direction of the object surface, and comprising a controller which, in order to change at least one property of the emitted radiation, controls the radiation source according to a light object to be generated on the object surface. The controller is designed in such a way that at least two of the plurality of emitters of the radiation source are each individually controlled in order to change at least one property of the emitted radiation according to the light object to be generated, and at least one optical element for shaping, directing and/or converting the electromagnetic radiation is arranged in the beam path.

公开(公告)号：US20220131341A1

公开(公告)日：2022-04-28

申请号：US17437150

申请日：2020-02-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven GERHARD ,  Christoph EICHLER ,  Alfred LELL ,  Muhammad ALI

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/343 ,  H01S5/026 ,  H01L33/62

Abstract: The invention relates to a semiconductor laser diode, which comprises a semiconductor layer sequence grown in a vertical direction and having an active layer that is configured and provided to generate light during operation in at least one active region extending in a longitudinal direction, and which comprises a transparent electrically conductive cover layer on the semiconductor layer sequence, wherein the semiconductor layer sequence terminates in a vertical direction with a top side, and the top side has a contact region arranged in the vertical direction above the active region and at least one cover region directly adjoining the contact region in a lateral direction perpendicular to the vertical and longitudinal directions, the cover layer is applied contiguously to the contact region and the at least one cover region on the top side, the cover layer is applied directly to the top side of the semiconductor layer sequence at least in the at least one cover region, and at least one element defining the at least one active region is present which is covered by the cover layer. The invention further relates to a method of manufacturing a semiconductor laser diode.