公开(公告)号：US20170330757A1

公开(公告)日：2017-11-16

申请号：US15594482

申请日：2017-05-12

申请人： OSRAM Opto Semiconductors GmbH

发明人： Christoph EICHLER ,  Andre SOMERS ,  Harald KOENIG ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC分类号： H01L21/268 ,  H01L21/324 ,  H01L21/3105

CPC分类号： H01L27/1285 ,  H01L21/02104 ,  H01L21/02293 ,  H01L21/02365 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02636 ,  H01L21/02647 ,  H01L21/20 ,  H01L21/2022 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/3247 ,  H01L21/76248 ,  H01L21/76272 ,  H01L27/1281 ,  H01L33/007 ,  H01L33/025 ,  H01L33/08 ,  H01L33/12 ,  H01L2933/0016 ,  H01S5/2068 ,  H01S5/2077 ,  H01S5/222 ,  H01S5/223 ,  H01S2304/00

摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20220128662A1

公开(公告)日：2022-04-28

申请号：US17438727

申请日：2020-03-13

申请人： OSRAM Opto Semiconductors GmbH

发明人： Bernhard STOJETZ ,  Harald KOENIG ,  Alfred LELL ,  Muhammad ALI

IPC分类号： G01S7/481 ,  G02B27/09 ,  H01S5/024 ,  G02B26/10 ,  H01S5/00 ,  G01S17/931

摘要： The invention relates to a device and a method for projecting a plurality of radiation points onto an object surface, comprising at least one radiation source for emitting electromagnetic radiation, comprising at least one beam path, via which the radiation emitted at least temporarily by the emitters is deflected in the direction of the object surface, and comprising a controller which, in order to change at least one property of the emitted radiation, controls the radiation source according to a light object to be generated on the object surface. The controller is designed in such a way that at least two of the plurality of emitters of the radiation source are each individually controlled in order to change at least one property of the emitted radiation according to the light object to be generated, and at least one optical element for shaping, directing and/or converting the electromagnetic radiation is arranged in the beam path.

公开(公告)号：US20190355768A1

公开(公告)日：2019-11-21

申请号：US16528307

申请日：2019-07-31

申请人： OSRAM Opto Semiconductors GmbH

发明人： Christoph EICHLER ,  Andre SOMERS ,  Harald KOENIG ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L21/268 ,  H01L21/20 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/22 ,  H01L33/00 ,  H01L33/02

摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.