公开(公告)号：US11563153B2

公开(公告)日：2023-01-24

申请号：US17055309

申请日：2018-05-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Chai Liang Loke ,  Purusothaman Supramaniam ,  Vengadasalam Yogenthra ,  Luruthudass Annaniah

IPC: H01L33/48 ,  H01L33/58

Abstract: An optoelectronic device includes a substrate, an optoelectronic semiconductor component being arranged on the substrate and having a light-emitting surface, preferably on the upper side of the optoelectronic semiconductor component, and a cover being arranged on the substrate for covering the optoelectronic semiconductor component, the cover providing a cavity which surrounds the optoelectronic semiconductor component when the cover is arranged on the substrate, the cover having at least one channel which extends along a first direction in the cover from the outside to the cavity, and the first direction being not parallel to the substrate and preferably extending at least approximately perpendicular to the substrate.

公开(公告)号：US20210050493A1

公开(公告)日：2021-02-18

申请号：US16979677

申请日：2018-03-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jun Jun Lim ,  Sok Gek Beh ,  Mohd Fauzi Zainordin ,  Purusothaman Supramaniam

IPC: H01L33/58 ,  H01L33/48 ,  H01S5/022 ,  H01S5/02

Abstract: An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a carrier having at least two electrically conductive components connected by an electrically insulating material, an optoelectronic semiconductor chip fixed to the carrier at a top side of the carrier, the optoelectronic semiconductor chip configured to emit electromagnetic radiation, a total internal reflection lens and a housing surrounding the total internal reflection lens laterally, wherein the electrically insulating material does not protrude over the electrically conductive components at the top side of the carrier, wherein the housing and the total internal reflection lens are arranged at a radiation exit side of the optoelectronic semiconductor chip, and wherein the total internal reflection lens does not protrude over the housing at an upper side of the optoelectronic semiconductor device, the upper side facing away from the carrier.