公开(公告)号：US10808893B2

公开(公告)日：2020-10-20

申请号：US16291679

申请日：2019-03-04

申请人： OSRAM Opto Semiconductors GmbH ,  The Research Foundation for State University of New York

发明人： Alan Lenef ,  David Klotzkin ,  Xin Wen

IPC分类号： H01L33/46 ,  F21K9/68 ,  H01L33/60 ,  H01L33/50 ,  F21K9/64 ,  H01L33/48 ,  F21V7/26 ,  H01S5/022 ,  H01L27/146 ,  H01L27/32 ,  F21Y115/30 ,  F21Y115/10

摘要： An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.

公开(公告)号：US11226082B1

公开(公告)日：2022-01-18

申请号：US16992611

申请日：2020-08-13

申请人： OSRAM Opto Semiconductors GmbH ,  The Research Foundation for State University of New York

发明人： Alan Lenef ,  David Klotzkin ,  Xin Wen

IPC分类号： F21V9/32 ,  H01S5/343 ,  F21Y115/30

摘要： An optoelectronic light source includes a semiconductor laser configured to produce polarized primary radiation, a converter material configured to absorb at least part of the primary radiation and convert the primary radiation into a secondary radiation of an increased wavelength, a planar multi-layered mirror located between the semiconductor laser and the converter material, the multi-layered mirror configured to transmit the primary radiation and reflect the secondary radiation, and an optical element provided between the semiconductor laser and the multi-layered mirror, wherein the optical element is configured such that the primary radiation coming from the semiconductor laser impinges on the multi-layered mirror at a Brewster angle.

公开(公告)号：US20200284401A1

公开(公告)日：2020-09-10

申请号：US16291679

申请日：2019-03-04

申请人： OSRAM Opto Semiconductors GmbH ,  The Research Foundation for State University of New York

发明人： Alan Lenef ,  David Klotzkin ,  Xin Wen

IPC分类号： F21K9/68 ,  H01L33/60 ,  H01L33/50 ,  F21K9/64 ,  H01S5/022 ,  H01L33/48 ,  F21V7/26

摘要： An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.