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公开(公告)号:US11222924B2
公开(公告)日:2022-01-11
申请号:US16811569
申请日:2020-03-06
IPC分类号: H01L27/30 , H01L51/00 , C09K11/66 , H01L51/44 , H01L51/42 , H01L31/036 , H01L31/0687 , H01L31/0725 , H01L31/0256
摘要: There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1-xA′xBX3-yX′y, wherein A is a formamidinium cation (HC(NH)2)2+), A′ is a caesium cation (Cs+) B is at least one divalent inorganic cation, X is iodide and X is bromide, and x is greater than 0 and equal to or less than 0.4 and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.
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公开(公告)号:US11728098B2
公开(公告)日:2023-08-15
申请号:US15735740
申请日:2016-06-10
IPC分类号: H01G9/20 , C23C18/12 , H10K30/87 , H10K30/15 , H10K71/16 , H01G9/00 , H01L31/0236 , H01L31/0725 , H01L31/074 , H10K102/10 , H01L31/0256
CPC分类号: H01G9/2009 , C23C18/1204 , H01G9/0036 , H01L31/02363 , H01L31/074 , H01L31/0725 , H10K30/151 , H10K30/87 , H10K71/164 , H01L2031/0344 , H10K2102/103 , Y02E10/549 , Y02P70/50
摘要: There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (Ra) or root mean square roughness (Rrms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.
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公开(公告)号:US10777364B2
公开(公告)日:2020-09-15
申请号:US16654890
申请日:2019-10-16
IPC分类号: C30B7/00 , H01G9/20 , H01L51/42 , C01G21/00 , H01L51/00 , C07C251/30 , H01L31/032 , H01L31/0256
摘要: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A′; one or more first anions X and one or more second anions X′.
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公开(公告)号:US10593487B2
公开(公告)日:2020-03-17
申请号:US15509990
申请日:2015-09-02
IPC分类号: C30B29/54 , H01G9/20 , H01L51/42 , C01G21/00 , H01L51/00 , C07C251/30 , H01L31/032 , H01L31/0256
摘要: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A′; one or more first anions X and one or more second anions X′.
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