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    SOLAR CELL MODULE
    1.
    发明申请
    SOLAR CELL MODULE 审中-公开

    公开(公告)号：US20180269344A1

    公开(公告)日：2018-09-20

    申请号：US15987446

    申请日：2018-05-23

    申请人： CSI CELLS CO., LTD.

    发明人： SONGBO WAN ,  XUSHENG WANG ,  GUOQIANG XING

    IPC分类号： H01L31/05 ,  H01L31/02

    CPC分类号： H01L31/0508 ,  H01L31/0201 ,  H01L31/042 ,  H01L31/068 ,  H01L31/074 ,  Y02E10/50

    摘要： Provided is a solar cell module including at least one solar cell string each including a plurality of solar cells connected in series by conductive tapes. A length of the solar cell in a direction in which the plurality of solar cells are connected in series by the conductive tapes is less than or equal to 10 cm. A total width of the conductive tapes adopted by each solar cell is 0.1% to 3% of a width of the solar cell. A ratio of the total width of the conductive tapes to the length of the solar cell is 8000 mm to 3000 mm. A contradiction between a shading loss and a resistance loss of the conductive tapes is harmonized, the maximization of output power is realized.

    QUANTUM-DOT PHOTOACTIVE-LAYER AND METHOD FOR MANUFACTURE THEREOF
    6.
    发明申请
    QUANTUM-DOT PHOTOACTIVE-LAYER AND METHOD FOR MANUFACTURE THEREOF 审中-公开
    量子光照层及其制造方法

    公开(公告)号：US20170062646A1

    公开(公告)日：2017-03-02

    申请号：US14884644

    申请日：2015-10-15

    申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE

    发明人： Ansoon Kim ,  Kyung Joong Kim ,  Songwoung Hong

    IPC分类号： H01L31/18 ,  H01L31/0352 ,  H01L31/074 ,  H01L33/00 ,  H01L33/06

    CPC分类号： H01L31/1804 ,  H01L31/035218 ,  H01L31/074 ,  H01L31/186 ,  H01L33/0058 ,  H01L33/06 ,  Y02E10/50

    摘要： Provided are a method of manufacturing a quantum-dot photoactive-layer including: alternately depositing an amorphous silicon compound layer and a silicon-rich compound layer containing conductive impurities and an excess of silicon based on a stoichiometric ratio on a silicon substrate to form a composite multi-layer; and heat treating the composite multi-layer to form a plurality of silicon quantum-dots in a matrix corresponding to a silicon compound, wherein an amorphous silicon layer containing the conductive impurities is formed at least one time instead of the silicon-rich compound layer, and a quantum-dot photoactive-layer manufactured using the method as described above.

    摘要翻译： 提供一种制造量子点光活性层的方法，包括：在硅衬底上交替地沉积含有导电杂质和含有过量硅的非晶硅化合物层和基于化学计量比的硅，以形成复合材料 多层; 并且对所述复合多层进行热处理以在与硅化合物相对应的矩阵中形成多个硅量子点，其中至少形成含有导电杂质的非晶硅层代替富硅化合物层， 以及使用上述方法制造的量子点光活性层。

    SYSTEM, METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION
    7.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION 审中-公开
    化学气相沉积的系统，方法和装置

    公开(公告)号：US20160359080A1

    公开(公告)日：2016-12-08

    申请号：US14985263

    申请日：2015-12-30

    申请人： SolarCity Corporation

    发明人： Yongkee Chae ,  Jianming Fu

    IPC分类号： H01L31/18 ,  C23C16/455

    CPC分类号： H01L31/1868 ,  C23C16/455 ,  H01L21/67161 ,  H01L21/67173 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/03762 ,  H01L31/074 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention can provide a system for fabricating a photovoltaic structure. The system can include a combined chemical vapor deposition tool that can include a static deposition module and an inline deposition module. The static deposition module can be configured to deposit a first passivation layer on a first side of a crystalline Si base layer of the photovoltaic structure. The inline deposition module is configured to deposit a second passivation layer on the first passivation layer, and the inline deposition module is coupled to the static deposition module in a way that the photovoltaic structure can be transferred from the static deposition module to the inline deposition module without leaving a common vacuum space.

    摘要翻译： 本发明的一个实施例可以提供一种用于制造光伏结构的系统。 该系统可以包括组合的化学气相沉积工具，其可以包括静电沉积模块和在线沉积模块。 静电沉积模块可以配置成在光伏结构的晶体Si基底层的第一侧上沉积第一钝化层。 在线沉积模块被配置为在第一钝化层上沉积第二钝化层，并且在线沉积模块以静电沉积模块转移到在线沉积模块的方式耦合到静电沉积模块 而不会留下共同的真空空间。

    SOLAR CELL WITH A LOW-RESISTIVITY TRANSPARENT CONDUCTIVE OXIDE LAYER
    8.
    发明申请
    SOLAR CELL WITH A LOW-RESISTIVITY TRANSPARENT CONDUCTIVE OXIDE LAYER 审中-公开
    具有低电阻透明导电氧化层的太阳能电池

    公开(公告)号：US20160329443A1

    公开(公告)日：2016-11-10

    申请号：US14705845

    申请日：2015-05-06

    申请人： SolarCity Corporation

    发明人： Wei Wang ,  Christopher Y. Liao ,  Jianming Fu ,  Zheng Xu

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/074 ,  C23C14/08 ,  H01L31/0376

    CPC分类号： H01L31/022466 ,  C23C14/086 ,  C23C14/5806 ,  C23C18/1653 ,  C23C18/54 ,  C25D5/022 ,  C25D17/10 ,  H01L31/03529 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/074 ,  H01L31/1884 ,  Y02E10/548

    摘要： One embodiment of the present invention provides a solar cell that includes a crystalline silicon base layer, a first quantum tunneling barrier layer deposited on a first side of the base layer, and a second quantum tunneling barrier layer deposited on a second side of the base layer. The solar cell further includes a doped amorphous silicon emitter layer positioned on the first side of the base layer. The first quantum tunneling barrier layer is between the emitter layer and the base layer. Also included is a doped amorphous silicon surface field layer positioned on the second side of the base layer. The second quantum tunneling barrier layer is between the surface field layer and the base layer. The solar cell further includes a transparent conductive oxide layer adjacent to the emitter layer or surface field layer. The transparent conductive oxide layer comprises hydrogen and indium oxide, indium-titanium-oxide, or indium-tungsten-oxide.

    摘要翻译： 本发明的一个实施例提供了一种太阳能电池，其包括晶体硅基底层，沉积在基底层的第一侧上的第一量子隧道势垒层和沉积在基底层的第二侧上的第二量子隧道势垒层 。 太阳能电池还包括位于基层的第一侧上的掺杂非晶硅发射极层。 第一量子隧道势垒层位于发射极层和基极层之间。 还包括位于基层的第二侧上的掺杂非晶硅表面场层。 第二量子隧道势垒层位于表面场层和基层之间。 太阳能电池还包括与发射极层或表面场层相邻的透明导电氧化物层。 透明导电氧化物层包括氢和氧化铟，氧化铟钛或铟 - 氧化钨。