公开(公告)号：US20240043282A1

公开(公告)日：2024-02-08

申请号：US18365141

申请日：2023-08-03

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  AMIR ABBAS HAGIGHIRAD ,  FELICIANO GIUSTINO ,  MARINA FILIP ,  GEORGE VOLONAKIS

IPC分类号： C01G29/00 ,  C01G30/00 ,  H10K30/30 ,  H10K71/15 ,  H10K71/40 ,  H10K85/00 ,  H10K85/30 ,  H01G9/00 ,  H01G9/20

CPC分类号： C01G29/006 ,  C01G30/006 ,  H10K30/30 ,  H10K71/15 ,  H10K71/441 ,  H10K85/00 ,  H10K85/361 ,  H10K85/371 ,  H01G9/0036 ,  H01G9/2009 ,  H01G9/2018 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/84 ,  C01P2002/76 ,  Y02E10/549 ,  H10K30/151

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

公开(公告)号：US20210230014A1

公开(公告)日：2021-07-29

申请号：US17167705

申请日：2021-02-04

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  AMIR ABBAS HAGIGHIRAD ,  FELICIANO GIUSTINO ,  MARINA FILIP ,  GEORGE VOLONAKIS

IPC分类号： C01G29/00 ,  C01G30/00 ,  H01L51/00 ,  H01G9/00 ,  H01G9/20 ,  H01L51/42

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

公开(公告)号：US20180290897A1

公开(公告)日：2018-10-11

申请号：US15756346

申请日：2016-08-31

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  AMIR ABBAS HAGIGHIRAD ,  FELICIANO GIUSTINO ,  MARINA FILIP ,  GEORGE VOLONAKIS

IPC分类号： C01G29/00 ,  H01L51/00 ,  H01L51/42 ,  H01G9/00 ,  H01G9/20

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].