公开(公告)号：US11889712B2

公开(公告)日：2024-01-30

申请号：US17237262

申请日：2021-04-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yuta Kawano ,  Airi Ueda ,  Takeyoshi Watabe ,  Nobuharu Ohsawa ,  Keito Tosu ,  Harue Osaka ,  Satoshi Seo ,  Ryo Narukawa ,  Shiho Nomura

IPC分类号： H10K50/16 ,  H10K59/00 ,  H10K59/12 ,  H10K85/60 ,  H10K85/30 ,  H10K85/00

CPC分类号： H10K50/16 ,  H10K59/00 ,  H10K59/12 ,  H10K85/00 ,  H10K85/30 ,  H10K85/615 ,  H10K85/631 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6574

摘要： A light-emitting device with high emission efficiency is provided. The light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a light-emitting layer and an electron-transport layer; the light-emitting layer includes a light-emitting material; the electron-transport layer includes an organic compound having an electron-transport property and a metal complex of an alkali metal; the ordinary refractive index of the organic compound having an electron-transport property in a peak wavelength of light emitted from the light-emitting material is greater than or equal to 1.50 and less than or equal to 1.75; and the ordinary refractive index of the metal complex of an alkali metal in the peak wavelength of the light emitted from the light-emitting material is greater than or equal to 1.45 and less than or equal to 1.70.

公开(公告)号：US20230197869A1

公开(公告)日：2023-06-22

申请号：US18052325

申请日：2022-11-03

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

IPC分类号： H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

公开(公告)号：US11751415B2

公开(公告)日：2023-09-05

申请号：US16965585

申请日：2019-01-02

申请人： OTI LUMIONICS, INC.

发明人： Yi-Lu Chang ,  Qi Wang ,  Scott Nicholas Genin ,  Michael Helander ,  Jacky Qiu ,  Zhibin Wang ,  Benoit Lessard

IPC分类号： H10K50/824 ,  H10K85/00 ,  H10K85/60

CPC分类号： H10K50/824 ,  H10K85/00 ,  H10K85/622

摘要： An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).

公开(公告)号：US20230200242A1

公开(公告)日：2023-06-22

申请号：US17998917

申请日：2021-05-20

申请人： Denka Company Limited

发明人： Yasuaki SAKURAI ,  Masahide YAMADA ,  Jun WATANABE

IPC分类号： H10N10/855 ,  H10N10/01

CPC分类号： H10N10/855 ,  H10N10/01 ,  H10K85/00

摘要： An n-type material for thermoelectric conversion obtained by doping a p-type material for thermoelectric conversion with a dopant, the p-type material for thermoelectric conversion containing a carbon nanotube and a conductive resin, in which the dopant contains an anion that is a complex ion, an alkali metal cation, and a cation scavenger.

公开(公告)号：US12069944B2

公开(公告)日：2024-08-20

申请号：US17294370

申请日：2020-01-14

申请人： LG CHEM, LTD.

发明人： Sung Jae Lee ,  Sung Kil Hong ,  Yongbum Cha ,  Woo Jin Cho ,  Joo Yong Yoon ,  Hyeon Jin Mun

IPC分类号： H01L51/00 ,  H10K50/15 ,  H10K85/00 ,  H10K85/60 ,  H10K50/17 ,  H10K50/18

CPC分类号： H10K85/636 ,  H10K85/00 ,  H10K85/633 ,  H10K50/15 ,  H10K50/17 ,  H10K50/18 ,  H10K85/626 ,  H10K85/6572

摘要： An organic light emitting device including a first electrode; a second electrode provided to face the first electrode; and an organic material layer having one, two or more layers provided between the first electrode and the second electrode, wherein the organic material layer includes a first organic material layer including a compound of Chemical Formula 1 and a second organic material layer including a compound of Chemical Formula 2.

公开(公告)号：US12004414B2

公开(公告)日：2024-06-04

申请号：US16972518

申请日：2019-09-18

申请人： LG CHEM, LTD.

发明人： Yongnam Kim ,  Jong Seok Kim ,  Yun Hye Hahm ,  Seiyong Kim

IPC分类号： H01L51/00 ,  H01L31/0224 ,  H01L31/18 ,  H10K30/82 ,  H10K71/50 ,  H10K85/00

CPC分类号： H10K71/50 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H10K30/821 ,  H10K85/00

摘要： A method for manufacturing a device, the method including: preparing a first laminate including a first buffer layer and a second buffer layer; preparing a second laminate including a third buffer layer provided on a carbon electrode; and attaching the first laminate to the second laminate so that the second buffer layer is in contact with the third buffer layer.

公开(公告)号：US11820670B2

公开(公告)日：2023-11-21

申请号：US17167705

申请日：2021-02-04

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： Henry James Snaith ,  Amir Abbas Hagighirad ,  Feliciano Giustino ,  Marina Filip ,  George Volonakis

IPC分类号： C01G29/00 ,  C01G30/00 ,  H10K30/30 ,  H10K71/15 ,  H10K71/40 ,  H10K85/00 ,  H10K85/30 ,  H01G9/00 ,  H01G9/20 ,  H10K30/15

CPC分类号： C01G29/006 ,  C01G30/006 ,  H01G9/0036 ,  H01G9/2009 ,  H01G9/2018 ,  H10K30/30 ,  H10K71/15 ,  H10K71/441 ,  H10K85/00 ,  H10K85/361 ,  H10K85/371 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/84 ,  H10K30/151 ,  Y02E10/549

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

公开(公告)号：US12108676B2

公开(公告)日：2024-10-01

申请号：US17998917

申请日：2021-05-20

申请人： Denka Company Limited

发明人： Yasuaki Sakurai ,  Masahide Yamada ,  Jun Watanabe

IPC分类号： H10N10/855 ,  H10N10/01 ,  H10K85/00

CPC分类号： H10N10/855 ,  H10N10/01 ,  H10K85/00

摘要： An n-type material for thermoelectric conversion obtained by doping a p-type material for thermoelectric conversion with a dopant, the p-type material for thermoelectric conversion containing a carbon nanotube and a conductive resin, in which the dopant contains an anion that is a complex ion, an alkali metal cation, and a cation scavenger.

公开(公告)号：US20240043282A1

公开(公告)日：2024-02-08

申请号：US18365141

申请日：2023-08-03

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： HENRY JAMES SNAITH ,  AMIR ABBAS HAGIGHIRAD ,  FELICIANO GIUSTINO ,  MARINA FILIP ,  GEORGE VOLONAKIS

IPC分类号： C01G29/00 ,  C01G30/00 ,  H10K30/30 ,  H10K71/15 ,  H10K71/40 ,  H10K85/00 ,  H10K85/30 ,  H01G9/00 ,  H01G9/20

CPC分类号： C01G29/006 ,  C01G30/006 ,  H10K30/30 ,  H10K71/15 ,  H10K71/441 ,  H10K85/00 ,  H10K85/361 ,  H10K85/371 ,  H01G9/0036 ,  H01G9/2009 ,  H01G9/2018 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/84 ,  C01P2002/76 ,  Y02E10/549 ,  H10K30/151

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI]; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [BI] selected from Cu+, Ag+ and Au+; (iii) one or more trications [BIII]; and (iv) one or more halide anions [X].

公开(公告)号：US11882711B2

公开(公告)日：2024-01-23

申请号：US16315670

申请日：2017-07-07

申请人： Technische Universiteit Eindhoven

发明人： Yinghuan Kuang ,  Rudolf Emmanuel Isidore Schropp ,  Dibyashree Koushik ,  Mariadriana Creatore ,  Sjoerd Veenstra

IPC分类号： H10K30/88 ,  H10K30/10 ,  H10K30/40 ,  H10K30/81 ,  H10K85/00 ,  H10K30/15 ,  H10K85/20 ,  H10K102/10

CPC分类号： H10K30/88 ,  H10K30/10 ,  H10K30/40 ,  H10K30/81 ,  H10K85/00 ,  H10K30/151 ,  H10K85/211 ,  H10K2102/101 ,  Y02E10/549

摘要： A hybrid organic-inorganic solar cell is provided that includes a substrate, a transparent conductive oxide (TCO) layer deposited on the substrate, an n-type electron transport material (ETM) layer, a p-type hole transport material (HTM) layer, an i-type perovskite layer, and an electrode layer, where the substrate layers are arranged in an n-i-p stack, or a p-i-n stack, where the passivating barrier layer is disposed between the layers of the (i) perovskite and HTM, (ii) perovskite and ETM, (iii) perovskite and HTM, and perovskite and ETM, or (iv) TCO and ETM, and ETM and perovskite, and perovskite and HTM, or (v) substrate and TCO, and TCO and ETM, and ETM and perovskite, and perovskite layer and HTM, or (vi) a pair of ETM layers, or (vii) a pair of HTM layers.