公开(公告)号：US20140158530A1

公开(公告)日：2014-06-12

申请号：US14181886

申请日：2014-02-17

Applicant: Oerlikon Advanced Technologies AG

Inventor： Juergen Weichart ,  Mohamed Elghazzali ,  Stefan Bammesberger ,  Dennis Minkoley

IPC: C23C14/34

CPC classification number: C23C14/3485 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/35 ,  H01J37/345 ,  H01J37/3467 ,  H01L21/2855

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract translation: 沉积金属化结构（1）的方法包括通过在多个脉冲中在阳极和靶之间施加电源以将靶从靶反应地溅射到衬底（2）上来沉积TaN层（4），以形成 TaN籽晶层（4）。 通过以多个脉冲施加电源将Ta层（5）沉积到TaN晶种层（4）上，并向支撑衬底（2）的基座施加高频信号以产生相邻的自偏置场 （2）。

公开(公告)号：US09644261B2

公开(公告)日：2017-05-09

申请号：US14181886

申请日：2014-02-17

Applicant: Oerlikon Advanced Technologies AG

Inventor： Juergen Weichart ,  Mohamed Elghazzali ,  Stefan Bammesberger ,  Dennis Minkoley

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/04 ,  C23C14/06 ,  C23C14/16 ,  C23C14/35 ,  H01L21/285

CPC classification number: C23C14/3485 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/35 ,  H01J37/345 ,  H01J37/3467 ,  H01L21/2855

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).