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    Apparatus and method for pretreating and coating bodies
    5.
    发明授权
    Apparatus and method for pretreating and coating bodies 有权

    公开(公告)号：US09812299B2

    公开(公告)日：2017-11-07

    申请号：US12989882

    申请日：2009-04-28

    申请人： Rainer Cremer ,  Walter May

    发明人： Rainer Cremer ,  Walter May

    IPC分类号： C23C14/14 ,  H01J37/34 ,  C23C14/35

    CPC分类号： H01J37/3408 ,  C23C14/14 ,  C23C14/352 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3473

    摘要： The invention relates to an apparatus and a method for pretreating and coating bodies by means of magnetron sputtering. In a vacuum chamber having a metallic chamber wall (26), magnetrons with sputter targets are arranged, at least one of which is an HPPMS magnetron to which electric pulses are fed by connecting a capacitive element (6) with the sputter target of the HPPMS magnetron via a switching element (5). To achieve effective pretreatment and coating of substrates it is provided according to a first aspect to arrange the switching element on the chamber wall. According to a second aspect, an electrode pair is provided, wherein a first electrode is an HPPMS magnetron (1) and the first and second electrodes are arranged in such a manner that a body (11) supported on a substrate table (4) is arranged between the active surfaces of the electrode pair or is moved through the space between the active surfaces of the electrode pair. In a third aspect, a method is provided, wherein, in an etch step, a negative bias voltage is applied to the body and the body is etched by means of metal ion bombardment, and subsequently the bias voltage is continuously lowered so that material sputtered-off from the sputter targets results in a layer build-up on the body.

    Multilayer solar selective coating for high temperature solar thermal applications
    7.
    发明授权
    Multilayer solar selective coating for high temperature solar thermal applications 有权
    用于高温太阳能热应用的多层太阳能选择涂层

    公开(公告)号：US09476115B2

    公开(公告)日：2016-10-25

    申请号：US14820104

    申请日：2015-08-06

    申请人： Council of Scientific & Industrial Research

    发明人： Barshilia Harish Chandra

    IPC分类号： B32B15/04 ,  C23C14/06 ,  C23C14/02 ,  H01J37/34 ,  F24J2/46 ,  F24J2/48 ,  C23C14/08 ,  C23C14/16 ,  C23C14/58

    CPC分类号： C23C14/0688 ,  C23C14/022 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/165 ,  C23C14/5806 ,  F24S70/20 ,  F24S70/30 ,  H01J37/3405 ,  H01J37/3467 ,  Y02E10/40

    摘要： A multilayer solar selective coating on metallic and non-metallic substrates suitable for high temperature solar thermal power applications. The optimized solar selective coating of the present invention on stainless steel substrate exhibits absorptance of 0.954 and emittance of 0.07. A five layer coating is deposited using the sputtering process, and includes tungsten (W), titanium aluminum nitride (TiAlN), titanium aluminum silicon nitride (TiAlSiN), titanium aluminum silicon oxy-nitride (TiAlSiON), and titanium aluminum silicon oxide (TiAlSiO) layers. The first layer (W) acts an infrared reflector, the second layer (TiAlN), the third layer (TiAlSiN) and the fourth layer (TiAlSiON) act as the absorber layer and the fifth layer (TiAlSiO) acts as the anti-reflection layer. The high-temperature solar selective coating exhibits average emittance of 0.10 at 400° C. on stainless steel substrate in the wavelength range of 2.5-25 μm, thus is suitable for applications in concentrating collectors like evacuated receiver tubes for solar thermal power generation.

    摘要翻译： 适用于高温太阳能热电应用的金属和非金属基底上的多层太阳能选择涂层。 本发明优选的不锈钢基板的吸收率为0.954，发射率为0.07。 使用溅射法沉积五层涂层，其中包括钨（W），氮化钛铝（TiAlN），氮化钛铝（TiAlSiN），钛铝硅氮化物（TiAlSiON）和钛铝氧化硅（TiAlSiO ）层。 第一层（W）作为红外反射体，第二层（TiAlN），第三层（TiAlSiN）和第四层（TiAlSiON）作为吸收层，第五层（TiAlSiO）作为抗反射层 。 高温太阳能选择性涂层在不锈钢基板上，在400℃的平均发射率为0.10，波长范围为2.5-25μm，因此适用于集中器，如抽真空接收管用于太阳能发电。

    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS
    8.
    发明申请
    MODULATION OF REVERSE VOLTAGE LIMITED WAVEFORMS IN SPUTTERING DEPOSITION CHAMBERS 审中-公开
    溅射沉积室中逆向电压有限波形的调制

    公开(公告)号：US20160215386A1

    公开(公告)日：2016-07-28

    申请号：US14917511

    申请日：2014-09-09

    申请人： ITN ENERGY SYSTEMS, INC.

    发明人： Michael Wayne Stowell

    IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/34

    CPC分类号： C23C14/542 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/54 ,  H01J37/32146 ,  H01J37/3405 ,  H01J37/3444 ,  H01J37/3467 ,  H01J37/3476

    摘要： Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality.

    摘要翻译： 施加到溅射沉积室的阴极的波形的调制调节溅射沉积室中的溅射速率，离子的密度和动能。 波形可以包括具有叠加在脉冲DC波形上的调制AC信号的脉冲DC波形。 DC波形可能具有反向电压周期。 提供反向电压限制电路，以便将反向电压尖峰限制到所选择的反向电压阈值。 可以调制波形的各种性质来提高或降低溅射速率和薄膜质量。

    APPARATUS FOR PVD DIELECTRIC DEPOSITION
    9.
    发明申请
    APPARATUS FOR PVD DIELECTRIC DEPOSITION 有权
    PVD电介质沉积设备

    公开(公告)号：US20160172168A1

    公开(公告)日：2016-06-16

    申请号：US14616895

    申请日：2015-02-09

    申请人： APPLIED MATERIALS, INC.

    发明人： Keith A. Miller ,  THANH X. NGUYEN ,  ILYA LAVITSKY ,  RANDY SCHMIEDING ,  PRASHANTH KOTHNUR

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3452 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3467

    摘要： Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

    摘要翻译： 本文提供介电材料的物理气相沉积设备。 在一些实施例中，物理气相沉积室的室盖包括耦合到内部目标组件的内部磁控管组件和联接到外部目标组件的外部磁体组件，其中内部磁控管组件和内部目标组件被电隔离 从外部磁体组件和外部目标组件。

    Nanocluster Production Device
    10.
    发明申请
    Nanocluster Production Device 审中-公开
    纳米簇生产装置

    公开(公告)号：US20160111262A1

    公开(公告)日：2016-04-21

    申请号：US14893775

    申请日：2014-05-26

    申请人： AYABO CORPORATION ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

    发明人： Atsushi Nakajima ,  Hironori Tsunoyama ,  Chuhang Zhang ,  Hiroki Akatsuka ,  Keizo Tsukamoto

    IPC分类号： H01J37/34 ,  C23C14/14 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35

    CPC分类号： H01J37/3405 ,  C23C14/14 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/08 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3467 ,  H01J2237/081 ,  H01J2237/0812

    摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

    摘要翻译： 使用纳米簇生产装置改善纳米簇的尺寸和结构的控制。 希望增加获得的量和具有尺寸和结构的纳米簇的产量，其中至少一个被选择。 纳米簇生产装置具有真空室，通过脉冲放电产生等离子体的溅射源，向溅射源供给脉冲功率的脉冲电源，向溅射源供给第一惰性气体的第一惰性气体供给装置， 存储在真空室中的簇生长池和将第二惰性气体引入聚集体生长池中的第二惰性气体引入装置。