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公开(公告)号：US08681549B2
公开(公告)日：2014-03-25
申请号：US13566372
申请日：2012-08-03
申请人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
发明人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
CPC分类号： G11C11/5628 , G06F11/1008 , G06F11/1068 , G11C11/56 , G11C16/34 , G11C16/3459 , G11C29/00 , G11C29/52 , H03M13/2906
摘要： A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
摘要翻译： 一种用于数据存储的方法包括：通过对存储器单元进行编程来采用各自的第一编程级别，来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。
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公开(公告)号：US20120297270A1
公开(公告)日：2012-11-22
申请号：US13566372
申请日：2012-08-03
申请人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
发明人： Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasoria
CPC分类号： G11C11/5628 , G06F11/1008 , G06F11/1068 , G11C11/56 , G11C16/34 , G11C16/3459 , G11C29/00 , G11C29/52 , H03M13/2906
摘要： A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
摘要翻译： 一种用于数据存储的方法包括：通过对存储器单元进行编程来采用各自的第一编程级别，来将第一数据位在第一时间存储在一组多位模拟存储单元中。 第二数据位通过对存储器单元进行编程以采取依赖于第一编程电平和第二数据位的相应的第二编程电平而在比第一时间晚的第二时间存储在存储单元组中。 响应于第一次和第二次之间的差异选择存储策略。 将存储策略应用于从第一数据位和第二数据位中选择的至少一组数据位。
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公开(公告)号：US08085586B2
公开(公告)日：2011-12-27
申请号：US12344233
申请日：2008-12-25
申请人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasoria , Shai Winter
发明人： Oren Golov , Eyal Gurgi , Dotan Sokolov , Yoav Kasoria , Shai Winter
IPC分类号： G11C16/04
CPC分类号： G11C27/005 , G11C16/349 , G11C16/3495
摘要： A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.
摘要翻译： 一种用于操作存储器的方法包括将至少一个脉冲施加到一组模拟存储器单元，以便使该组中的存储器单元呈现相应的存储值。 在应用脉冲之后，从组中的存储器单元读取相应的存储值。 计算读取存储值的一个或多个统计属性。 响应于统计属性来估计存储器单元组的磨损水平。
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