公开(公告)号：US06402843B1

公开(公告)日：2002-06-11

申请号：US09456135

申请日：1999-12-07

申请人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger ,  Igor Bagriy

发明人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger ,  Igor Bagriy

IPC分类号： C23C1600

CPC分类号： H01L21/68735 ,  B25B11/005 ,  B65G47/911 ,  H01L21/6838

摘要： The present invention relates to a non-contact holder for substantially planar workpieces, particularly suited for holding thin workpieces without substantial distortion. The present invention includes a cylindrical chuck having a gas inlet orifice positioned at an oblique. The introduction of pressurized gas creates a vortex and vacuum attraction holding a wafer in close proximity to the chuck while the gas exiting from the chuck prevents contact between wafer and chuck. Small diameter chucks located in close proximity help the present invention avoid distortion when processing very thin workpieces. The gas exiting from the chuck of the present invention exits preferentially in a certain angular direction. Chucks are arranged on the wafer holder such that exiting gas is preferentially directed radially towards the periphery of the holder and that exiting gas is directed between adjacent chucks, not directly at another nearby chuck. Chucks on the periphery of the holder are positioned have the gas exiting therefrom towards the periphery of the holder and overlapping the gas flow from immediately adjacent chucks. Chucks on the periphery of the holder are located as close together as feasible. The combination of overlapping gas flow and close proximity creates a gas shield on the boundary of the wafer holder.

摘要翻译： 本发明涉及一种用于基本上平面的工件的非接触保持器，特别适用于保持薄的工件而没有实质的变形。 本发明包括具有位于倾斜处的气体入口孔的圆柱形卡盘。 加压气体的引入产生涡流和真空吸引，将晶片保持在靠近卡盘的位置，而从卡盘排出的气体防止晶片和卡盘之间的接触。 紧邻的小直径卡盘有助于本发明在加工非常薄的工件时避免扭曲。 从本发明的卡盘排出的气体优先在一定的角度方向上离开。 卡盘布置在晶片保持器上，使得离开的气体优选地朝向保持器的周边径向引导，并且排出气体被引导在相邻卡盘之间，而不是直接在另一个附近卡盘处。 定位在保持器周边的卡盘具有从其朝向保持器的周边离开的气体，并与来自紧邻的卡盘的气流重叠。 夹持器外围的夹头尽可能靠近在一起。 重叠气流和近距离的组合在晶片保持器的边界上形成气体屏蔽。

公开(公告)号：US06203661B1

公开(公告)日：2001-03-20

申请号：US09457042

申请日：1999-12-07

申请人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger

发明人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger

IPC分类号： C23F102

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449

摘要： The present invention comprises a brim surrounding a wafer or wafer-like object during plasma etching in a non-contact wafer holder, such brim facilitating uniform flow of the plasma discharge around the edge of the wafer during plasma etching. The brim of the present invention avoids plasma instability and non-uniform flow typical of conventional plasma etching near the edges of the wafer being etched. The brim of the present invention, by facilitating uniform and stable plasma flows, decreases non-uniform etching. One embodiment of the present invention permits the brim to move in the axial direction from a position substantially. This permits the etching process to be controlled for more uniform and precise wafer etching as lowering the brim tends to shadow the edge region of the wafer from the plasma, reducing etching in the edge region while not significantly affecting etching in the central regions of the wafer. Another embodiment of the wafer includes a barrier on the upper side of the brim directed upward from the brim at an oblique angle away from the wafer. This barrier contacts the upper surface of the brim so as to leave a protrusion or debris-collecting shelf on the upper interior portion of the brim. This shelf in combination with the upward oblique barrier deflects the plasma and debris from plasma etching away from the wafer. Another embodiment of the invention includes a gas-controlling baffle in which gas flow around the edge of the wafer may be controlled to compensate for mechanical imprecision in the gap between the brim and the wafer and/or to provide an additional means of controlling etching in the vicinity of the edge of the wafer.

摘要翻译： 本发明包括在非接触晶片保持器中的等离子体蚀刻期间围绕晶片或晶片状物体的边缘，这样的边缘有助于等离子体蚀刻期间围绕晶片边缘的等离子体放电的均匀流动。 本发明的边缘避免了正在蚀刻的晶片的边缘附近的常规等离子体蚀刻的等离子体不稳定性和不均匀流动。 通过促进均匀和稳定的等离子体流动，本发明的边缘减少了不均匀的蚀刻。 本发明的一个实施例允许边缘在大体上从轴线方向移动。 这允许蚀刻过程被控制以更均匀和精确的晶片蚀刻，因为降低边缘倾向于从等离子体遮蔽晶片的边缘区域，减少边缘区域中的蚀刻，同时不显着影响晶片的中心区域中的蚀刻 。 晶片的另一实施例包括位于边缘上侧的阻挡物，其从棱边向上以与倾斜角度相离的晶片向上指向。 该阻挡件接触边缘的上表面，以便在边缘的上部内部部分留下突起或碎屑收集架。 这个搁板与向上的倾斜屏障组合使得等离子体和碎屑等离子体蚀刻偏离晶片。 本发明的另一实施例包括气体控制挡板，其中围绕晶片边缘的气流可被控制以补偿边缘和晶片之间的间隙中的机械不精确性和/或提供控制蚀刻的附加装置 晶片边缘附近。

公开(公告)号：US06667242B2

公开(公告)日：2003-12-23

申请号：US09757242

申请日：2001-01-08

申请人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger

发明人： Oleg Siniaguine ,  Sergey Savastiouk ,  Alex Berger

IPC分类号： C23F102

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32449

摘要： The present invention comprises a brim surrounding a wafer or wafer-like object during plasma etching in a non-contact wafer holder, such brim facilitating uniform flow of the plasma discharge around the edge of the wafer during plasma etching. The brim of the present invention avoids plasma instability and non-uniform flow typical of conventional plasma etching near the edges of the wafer being etched. The brim of the present invention, by facilitating uniform and stable plasma flows, decreases non-uniform etching. One embodiment of the present invention permits the brim to move in the axial direction from a position substantially. This permits the etching process to be controlled for more uniform and precise wafer etching as lowering the brim tends to shadow the edge region of the wafer from the plasma, reducing etching in the edge region while not significantly affecting etching in the central regions of the wafer. Another embodiment of the wafer includes a barrier on the upper side of the brim directed upward from the brim at an oblique angle away from the wafer. This barrier contacts the upper surface of the brim so as to leave a protrusion or debris-collecting shelf on the upper interior portion of the brim. This shelf in combination with the upward oblique barrier deflects the plasma and debris from plasma etching away from the wafer. Another embodiment of the invention includes a gas-controlling baffle in which gas flow around the edge of the wafer may be controlled to compensate for mechanical imprecision in the gap between the brim and the wafer and/or to provide an additional means of controlling etching in the vicinity of the edge of the wafer.

摘要翻译： 本发明包括在非接触晶片保持器中的等离子体蚀刻期间围绕晶片或晶片状物体的边缘，这样的边缘有助于等离子体蚀刻期间围绕晶片边缘的等离子体放电的均匀流动。 本发明的边缘避免了正在蚀刻的晶片的边缘附近的常规等离子体蚀刻的等离子体不稳定性和不均匀流动。 通过促进均匀和稳定的等离子体流动，本发明的边缘减少了不均匀的蚀刻。 本发明的一个实施例允许边缘在大体上从轴线方向移动。 这允许蚀刻过程被控制以更均匀和精确的晶片蚀刻，因为降低边缘倾向于从等离子体遮蔽晶片的边缘区域，减少边缘区域中的蚀刻，同时不显着影响晶片的中心区域中的蚀刻 。 晶片的另一实施例包括位于边缘上侧的阻挡物，其从棱边向上以与倾斜角度相离的晶片向上指向。 该阻挡件接触边缘的上表面，以便在边缘的上部内部部分留下突起或碎屑收集架。 这个搁板与向上的倾斜屏障组合使得等离子体和碎屑等离子体蚀刻偏离晶片。 本发明的另一实施例包括气体控制挡板，其中围绕晶片边缘的气流可被控制以补偿边缘和晶片之间的间隙中的机械不精确性和/或提供控制蚀刻的附加装置 晶片边缘附近。

公开(公告)号：US06448188B1

公开(公告)日：2002-09-10

申请号：US10020405

申请日：2001-12-14

申请人： Oleg Siniaguine ,  Alex Berger

发明人： Oleg Siniaguine ,  Alex Berger

IPC分类号： H01L2131

CPC分类号： H01L21/68764 ,  H01L21/6838 ,  H01L21/68771 ,  Y10S414/135 ,  Y10S414/136 ,  Y10T29/41

摘要： The present invention comprises a dynamic brake that applies restraining frictional force to a wafer in a wafer holder while the wafer holder is substantially at rest, but releases the restraining force as the processing carousel containing several wafer holders rotates about a central axis of the carousel. This dynamic brake preferably comprises a boot that passes through an opening in the wafer holder to rest on the surface of the wafer in an exclusion zone near the wafer's edge. The exclusion zone is typically no more than about 3 mm in extent. The frictional force between the boot and wafer is sufficient to prevent unwanted motion of the wafer in the holder. As the wafer holder rotates about a central axis of the processing carousel, centrifugal forces applied to the brake arising from such rotation cause the boot to pivot upward, releasing the frictional force on the wafer.

摘要翻译： 本发明包括动力制动器，当晶片保持器基本上处于静止状态时，在晶片保持器中对晶片施加抑制摩擦力，但是随着包含多个晶片保持架的处理转盘绕转盘的中心轴旋转，释放限制力。 该动态制动器优选地包括穿过晶片保持器中的开口的保护罩，以在靠近晶片边缘的排除区域中搁置在晶片的表面上。 排阻区的范围通常不超过约3毫米。 靴子和晶片之间的摩擦力足以防止晶片在保持器中的不期望的运动。 当晶片保持架围绕处理转盘的中心轴线旋转时，由这种旋转引起的对制动器施加的离心力使得护罩向上枢转，释放了晶片上的摩擦力。

公开(公告)号：US06398823B1

公开(公告)日：2002-06-04

申请号：US09456094

申请日：1999-12-07

申请人： Oleg Siniaguine ,  Alex Berger

发明人： Oleg Siniaguine ,  Alex Berger

IPC分类号： H01L2100

CPC分类号： H01L21/68764 ,  H01L21/6838 ,  H01L21/68771 ,  Y10S414/135 ,  Y10S414/136 ,  Y10T29/41

摘要： The present invention comprises a dynamic brake that applies restraining frictional force to a wafer in a wafer holder while the wafer holder is substantially at rest, but releases the restraining force as the processing carousel containing several wafer holders rotates about a central axis of the carousel. This dynamic brake preferably comprises a boot that passes through an opening in the wafer holder to rest on the surface of the wafer in an exclusion zone near the wafer's edge. The exclusion zone is typically no more than about 3mm in extent. The frictional force between the boot and wafer is sufficient to prevent unwanted motion of the wafer in the holder. As the wafer holder rotates about a central axis of the processing carousel, centrifugal forces applied to the brake arising from such rotation cause the boot to pivot upward, releasing the frictional force on the wafer.

摘要翻译： 本发明包括动力制动器，当晶片保持器基本上处于静止状态时，在晶片保持器中对晶片施加抑制摩擦力，但是随着包含多个晶片保持架的处理转盘绕转盘的中心轴旋转，释放限制力。 该动态制动器优选地包括穿过晶片保持器中的开口的保护罩，以在靠近晶片边缘的排除区域中搁置在晶片的表面上。 排阻区的范围通常不超过约3mm。 靴子和晶片之间的摩擦力足以防止晶片在保持器中的不期望的运动。 当晶片保持架围绕处理转盘的中心轴线旋转时，由这种旋转引起的对制动器施加的离心力使得护罩向上枢转，释放了晶片上的摩擦力。