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公开(公告)号:US20090149008A1
公开(公告)日:2009-06-11
申请号:US12244440
申请日:2008-10-02
申请人: Olga Kryliouk , Sandeep Nijhawan , Yuriy Melnik , Lori D. Washington , Jacob W. Grayson , Sung W. Jun , Jie Su
发明人: Olga Kryliouk , Sandeep Nijhawan , Yuriy Melnik , Lori D. Washington , Jacob W. Grayson , Sung W. Jun , Jie Su
IPC分类号: H01L21/20
CPC分类号: C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45578 , C30B29/403
摘要: Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process.
摘要翻译: 本发明的实施方案一般涉及通过氢化物气相外延(HVPE)方法形成III-V族材料的方法。 在一个实施例中,提供了一种用于在处理室内的衬底上形成氮化镓材料的方法,其包括加热金属源以形成加热的金属源,其中加热的金属源包含镓,铝,铟,其合金或 其组合,同时形成金属氯化物气体,将加热的金属源暴露于氯气中,在HVPE工艺期间在衬底上形成金属氮化物层,同时将衬底暴露于金属氯化物气体和氮气前体气体。 该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。 在一个实例中,处理室的排气管道在预处理过程中被加热到约200℃或更低。