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公开(公告)号：US11163204B2
公开(公告)日：2021-11-02
申请号：US16811122
申请日：2020-03-06
发明人： Hong Liu , Yezhou Fang , Fengguo Wang , Xinguo Wu , Zhixuan Guo , Haidong Wang , Liang Tian , Kai Li , Bo Ma
IPC分类号： G02F1/1362 , G02F1/1333 , G02F1/1343
摘要： An array substrate, a display panel including the same, and a display device are provided. The array substrate includes: a base substrate and a planarization layer on the base substrate. A first conductive layer is disposed on a side of the planarization layer away from the base substrate. A first passivation layer is disposed on a side of the first conductive layer and the side of the planarization layer not being covered by the first conductive layer, away from the base substrate, and provided with a plurality of stress release openings. An insulating layer is disposed in the stress release openings and on a side of the first passivation layer away from the planarization layer. A second conductive layer is disposed on a side of the insulating layer away from the planarization layer.
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公开(公告)号：US11342460B2
公开(公告)日：2022-05-24
申请号：US16601991
申请日：2019-10-15
发明人： Zhixuan Guo , Fengguo Wang , Yezhou Fang , Xinguo Wu , Hong Liu , Kai Li , Liang Tian , Shiyu Zhang
IPC分类号： H01L29/786 , H01L29/66
摘要： A thin film transistor, a method for fabricating the same, an array substrate, a display panel, and a display device are provided. The thin film transistor includes a substrate, and an active layer on the substrate, wherein the active layer includes a poly-silicon layer and has a channel region and two electrode connection regions respectively on two sides of the channel region, and the channel region includes a plurality of lightly drain doping segments, which are spaced apart along from one of the electrode connection regions to the other electrode connection region, and channel segments located between the lightly drain doping segments.
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公开(公告)号：US20240304632A1
公开(公告)日：2024-09-12
申请号：US18027109
申请日：2022-03-01
发明人： Kai Li , Yezhou Fang , Feng Li , Hong Liu , Yuzhang Wang , Zhiguang Cai , Shan Yan , Chunjing Liu
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1288
摘要： This application provides a display substrate, a method for manufacturing the same, and a display device, which belongs to the technical field of displays. The method for manufacturing the display substrate comprises: forming a metal layer on a base substrate; forming a photoresist layer on the metal layer; exposing the photoresist layer by using a mask plate; developing the exposed photoresist layer to form a photoresist pattern; and omitting a step of baking the photoresist pattern, and etching the metal layer by using the photoresist pattern as a mask to form a signal line. The technical solution of the present disclosure can realize a narrow frame of a display product.
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公开(公告)号：US11362115B2
公开(公告)日：2022-06-14
申请号：US16640940
申请日：2019-03-22
发明人： Zhixuan Guo , Fengguo Wang , Yezhou Fang , Feng Li , Xinguo Wu , Hong Liu , Zifeng Wang , Lei Li , Kai Li , Liang Tian , Jing Zhao , Zhengkui Wang , Bo Ma , Haiqin Liang , Peng Liu
摘要： The present disclosure relates to the technical field of display. Disclosed are an array substrate and a preparation method therefor, and a display panel and a display device. The array substrate includes: a substrate; multiple gate lines, wherein the gate lines are located on the substrate, and extend along a first direction; multiple data lines, wherein the data lines are located on the substrate, and extend along a second direction, and the gate lines and the data lines intersect to define multiple pixel areas; and a touch-control electrode wiring wherein the touch-control electrode wiring has the same direction as that of the gate lines, and is arranged insulated from the gate lines on a different layer, and the orthographic projection of the touch-control electrode wiring on the substrate at least has an overlapping area with the orthographic projection of part of the gate lines on the substrate.
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公开(公告)号：US20240222511A1
公开(公告)日：2024-07-04
申请号：US17907790
申请日：2021-09-29
发明人： Haidong Su , Feng Li , Yezhou Fang , Lei Yao , Lei Yan , Chenglong Wang , Kai Li , Xiaogang Zhu , Hua Yang , Lin Hou , Yun Gao
IPC分类号： H01L29/786 , H01L21/265 , H01L21/306 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78621 , H01L29/66765 , H01L29/78669 , H01L21/26513 , H01L21/30604 , H01L27/1229
摘要： Provided is an amorphous silicon thin-film transistor including an amorphous silicon semiconductor layer, a source electrode, and a drain electrode that are successively disposed on a base substrate. Ions doped by an ion implantation process are present in a region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer. A concentration of the ions in a surface region, proximal to the source electrode and the drain electrode, of the amorphous silicon semiconductor layer is greater than or equal to 5*10{circumflex over ( )}20 atoms/cc.
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公开(公告)号：US11791278B2
公开(公告)日：2023-10-17
申请号：US17483822
申请日：2021-09-24
发明人： Lei Yao , Feng Li , Lei Yan , Kai Li , Chenglong Wang , Teng Ye , Lin Hou , Xiaofang Li
IPC分类号： H01L23/544 , H01L27/12
CPC分类号： H01L23/544 , H01L27/1248 , H01L27/1259 , H01L2223/54426
摘要： Provided are a display substrate motherboard and manufacturing method thereof, a display substrate and a display apparatus. The display substrate motherboard includes a substrate, a display substrate area on the substrate, and a mark area on the periphery of the display substrate area. The display substrate motherboard also includes a thin film transistor disposed in the display substrate area, a mark structure disposed in the mark area and a planarization layer disposed on one side of the thin film transistor away from the substrate, and the planarization layer includes a groove which is disposed at the corresponding position of the mark structure and extends along a direction close to the substrate, and an orthographic projection of the groove on the substrate covers an orthographic projection of the mark structure on the substrate.
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