公开(公告)号：US06699726B2

公开(公告)日：2004-03-02

申请号：US10336012

申请日：2003-01-03

申请人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

发明人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

IPC分类号： H01G706

CPC分类号： H01L21/76831 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5226 ,  H01L27/11502 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor substrate.

摘要翻译： 半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。 在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。 电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。 在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。 漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。 在半导体衬底上形成连接到另一个漏极区域和源极区域的布线。

公开(公告)号：US06521927B2

公开(公告)日：2003-02-18

申请号：US09102616

申请日：1998-06-23

申请人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

发明人： Osamu Hidaka ,  Sumito Ootsuki ,  Hiroshi Mochizuki ,  Hiroyuki Kanaya ,  Kumi Okuwada ,  Tomio Katata ,  Norihisa Arai ,  Hiroyuki Takenaka

IPC分类号： H01L31119

CPC分类号： H01L21/76831 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76834 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5226 ,  H01L27/11502 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the semiconductor substrate containing the transistor, a first insulation film is formed, and, at the upper layer side of the first insulation film, a capacitor is formed. The capacitor is comprised of a lower electrode, an inter-electrode insulation film comprising one of ferroelectric and high-permittivity dielectric, and an upper electrode. Before the inter-electrode insulation film is formed, a second insulation film is formed so as to cover the side face portion of the inter-electrode insulation film, the second insulation film protecting the side face portion of the inter-electrode insulation film. One of the drain region and the source region and one of the upper electrode and the lower electrode of the capacitor are connected to each other by an electrode wiring. A wiring connected to the other one of the drain region and the source region is formed on the semiconductor. substrate.

摘要翻译： 半导体器件以这样的方式构成，即在半导体衬底的表面层部分中形成具有由杂质扩散区域构成的漏极区域和源极区域的开关晶体管。 在含有晶体管的半导体基板上形成第一绝缘膜，在第一绝缘膜的上层侧形成电容器。 电容器包括下电极，包括铁电和高介电常数电介质之一的电极间绝缘膜和上电极。 在形成电极间绝缘膜之前，形成第二绝缘膜以覆盖电极间绝缘膜的侧面部分，第二绝缘膜保护电极间绝缘膜的侧面部分。 漏极区域和源极区域之一以及电容器的上部电极和下部电极中的一个通过电极布线彼此连接。 在半导体上形成与漏极区域和源极区域中的另一个连接的布线。 基质。