摘要:
A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.
摘要:
A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.
摘要:
A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.
摘要:
A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion.
摘要:
A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要:
An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
摘要:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要:
The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要:
A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要:
A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.