Abstract:
A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
Abstract:
A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.
Abstract:
Systems and fixtures for mounting, under mechanical constraint, wire-like or fiber-like samples of a high aspect ratio and down to 100 micrometers in diameter are disclosed. A region of interest along the length of the sample resides between and beyond a mechanical constraint on either side, allowing access to the region of interest for a wide number of characterization probes. The fixture may provide electrical isolation between two retaining blocks by means of a dielectric support member. The design may achieve minimal thermal expansion along the length of the sample by the material selection for the dielectric support member. Electrical contact may be introduced to the sample through conductive constraints in the retaining blocks. The fixture may have a minimal size perpendicular to the length axis of the sample to facilitate high probe fluxes when a diverging probe is used. The fixture may provide high x-ray transparency between the retaining blocks. The systems and fixtures as described therefore may provide a means for performing electrical and thermal testing on samples, including but not limited to solder butt-joints, across multimodal in situ characterization and imaging techniques to analyze dynamic electromigration.
Abstract:
A novel specimen holder for specimen support devices for insertion in electron microscopes. The novel specimen holder of the invention provides mechanical support for specimen support devices and as well as electrical contacts to the specimens or specimen support devices.
Abstract:
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
Abstract:
A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A grounding pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the grounding pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.
Abstract:
Electron microscope support structures and methods of making and using same. The support structures are generally constructed using semiconductor materials and semiconductor manufacturing processes. The temperature of the support structure may be controlled and/or gases or liquids may be confined in the observation region for reactions and/or imaging.
Abstract:
The present invention relates to a carrier device for transporting one or more manipulators into a vacuum specimen chamber of an electron microscope, characterized in that the carrier device comprises: (i) a platform having securing means for detachably securing the one or more manipulators to the platform, and (ii) electrical connectors secured to the platform for the electrical connection of the one or more manipulators. The present invention also relates to a method for transporting the carrier device into the vacuum specimen chamber of the electron microscope without altering the vacuum of the vacuum specimen chamber comprising transporting the carrier device of the invention through the specimen exchange chamber of the electron microscope and into the vacuum specimen chamber.
Abstract:
A coupling module may include an upper portion that defines an aperture, mask contact elements, chuck contact elements and an intermediate element that is connected between the mask contact elements and the upper portion. A shape and a size of the aperture may correspond to a shape and size of a pattern transfer area of an extreme ultra violet (EUVL) mask. The coupling module may be shaped and sized so that once the mask contact elements contact the upper portion of the EUVL mask, the chuck contact elements contact a chuck that supports the mask. The coupling module may further provide at least one conductive path between the upper portion of the EUVL mask and the chuck when the EUVL mask is positioned on the chuck.
Abstract:
Devices, mounts, stages, interfaces and systems to be developed that allow for in situ manipulation, experimentation and analysis of specimens directly within an electron microscope.