公开(公告)号：US10084008B2

公开(公告)日：2018-09-25

申请号：US15678790

申请日：2017-08-16

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yusuke Sakata ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Hiroshi Masuda ,  Hitoshi Kuriyama ,  Ryohei Miyagawa

IPC: H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L27/14806 ,  H01L21/76886 ,  H01L23/485 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14665 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

公开(公告)号：US10553639B2

公开(公告)日：2020-02-04

申请号：US16109473

申请日：2018-08-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke Sakata ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Hiroshi Masuda ,  Hitoshi Kuriyama ,  Ryohei Miyagawa

IPC: H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.