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公开(公告)号：US10553639B2
公开(公告)日：2020-02-04
申请号：US16109473
申请日：2018-08-22
Inventor： Yusuke Sakata , Mitsuyoshi Mori , Yutaka Hirose , Hiroshi Masuda , Hitoshi Kuriyama , Ryohei Miyagawa
IPC: H01L27/148 , H01L27/146 , H01L21/768 , H01L23/485
Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.
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公开(公告)号：US09653510B2
公开(公告)日：2017-05-16
申请号：US14554450
申请日：2014-11-26
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/3698 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US09386248B2
公开(公告)日：2016-07-05
申请号：US14554037
申请日：2014-11-25
Inventor： Hirohisa Ohtsuki , Akira Tanaka , Ryohei Miyagawa
IPC: H04N5/374 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/3741 , H01L27/14603 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14643 , H01L27/14665 , H04N5/37457
Abstract: A pixel includes: a photoelectric conversion unit that photoelectrically converts incident light and has an upper electrode, a lower electrode, and a photoelectric conversion film interposed between the upper electrode and the lower electrode; an amplifying transistor that outputs a signal according to an amount of a signal charge generated in the photoelectric conversion unit; a charge transfer line that connects the lower electrode and the amplifying transistor; and an output line that outputs the signal from the amplifying transistor, wherein at least a part of the output line is disposed to overlap the lower electrode without another line interposed therebetween.
Abstract translation: 像素包括：光电转换单元，其对入射光进行光电转换，并具有插入在上电极和下电极之间的上电极，下电极和光电转换膜; 放大晶体管，其根据在所述光电转换单元中产生的信号电荷的量输出信号; 连接下电极和放大晶体管的电荷传输线; 以及输出线，其输出来自所述放大晶体管的信号，其中所述输出线的至少一部分设置成与所述下电极重叠，而不插入另一条线。
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公开(公告)号：US10103181B2
公开(公告)日：2018-10-16
申请号：US15487941
申请日：2017-04-14
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/369 , H04N5/3745
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US09935149B2
公开(公告)日：2018-04-03
申请号：US15441568
申请日：2017-02-24
Inventor： Mitsuyoshi Mori , Ryohei Miyagawa , Yoshiyuki Ohmori , Yoshihiro Sato , Yutaka Hirose , Yusuke Sakata , Toru Okino
IPC: H01L27/146 , H01L27/30
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/307
Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.
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Patent Agency Ranking
公开(公告)号：US12266666B2
公开(公告)日：2025-04-01
申请号：US18107834
申请日：2023-02-09
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N25/77 , H04N25/709
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US10818707B2
公开(公告)日：2020-10-27
申请号：US16130664
申请日：2018-09-13
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745 , H04N5/369
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US10084008B2
公开(公告)日：2018-09-25
申请号：US15678790
申请日：2017-08-16
Inventor： Yusuke Sakata , Mitsuyoshi Mori , Yutaka Hirose , Hiroshi Masuda , Hitoshi Kuriyama , Ryohei Miyagawa
IPC: H01L27/148 , H01L27/146 , H01L21/768 , H01L23/485
CPC classification number: H01L27/14806 , H01L21/76886 , H01L23/485 , H01L27/1463 , H01L27/14643 , H01L27/14665 , H01L2924/00 , H01L2924/0002
Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.
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公开(公告)号：US11605656B2
公开(公告)日：2023-03-14
申请号：US17025620
申请日：2020-09-18
Inventor： Tokuhiko Tamaki , Hirohisa Ohtsuki , Ryohei Miyagawa , Motonori Ishii
IPC: H01L27/146 , H04N5/3745 , H04N5/369
Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.
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公开(公告)号：US09942506B2
公开(公告)日：2018-04-10
申请号：US15720668
申请日：2017-09-29
Inventor： Mitsuyoshi Mori , Hirohisa Ohtsuki , Yoshiyuki Ohmori , Yoshihiro Sato , Ryohei Miyagawa
IPC: H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H04N5/3745
Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.
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