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    Photodiode, photodiode array, and solid-state imaging device
    3.
    发明授权
    Photodiode, photodiode array, and solid-state imaging device 有权

    公开(公告)号：US10923614B2

    公开(公告)日：2021-02-16

    申请号：US15328648

    申请日：2015-07-09

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Yusuke Sakata ,  Manabu Usuda ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Yoshihisa Kato

    IPC: H01L31/107 ,  H01L27/146 ,  H02S40/44

    Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.

    Solid-state imaging device
    9.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10553639B2

    公开(公告)日：2020-02-04

    申请号：US16109473

    申请日：2018-08-22

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Yusuke Sakata ,  Mitsuyoshi Mori ,  Yutaka Hirose ,  Hiroshi Masuda ,  Hitoshi Kuriyama ,  Ryohei Miyagawa

    IPC: H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

    Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

    Solid-state imaging device
    10.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10192920B2

    公开(公告)日：2019-01-29

    申请号：US15913106

    申请日：2018-03-06

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Yusuke Sakata ,  Manabu Usuda ,  Mitsuyoshi Mori ,  Yoshihisa Kato

    IPC: H01L31/107 ,  H01L27/146 ,  H01L31/00 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378

    Abstract: A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.

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