公开(公告)号：US10825846B2

公开(公告)日：2020-11-03

申请号：US16034328

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kyosuke Kobinata ,  Sanshiro Shishido ,  Yoshihiro Sato

IPC: H01L27/146 ,  H01L31/0224 ,  H04N5/378 ,  H04N5/353 ,  H04N5/374 ,  H04N5/357

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode. An area of the second electrode is greater than an area of the fourth electrode, and both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in plan view.

公开(公告)号：US11646328B2

公开(公告)日：2023-05-09

申请号：US17039018

申请日：2020-09-30

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Kyosuke Kobinata ,  Sanshiro Shishido ,  Yoshihiro Sato

IPC: H01L27/146 ,  H01L31/0224 ,  H04N5/378 ,  H04N5/353 ,  H04N5/374 ,  H04N5/357

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/022408 ,  H04N5/353 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.