公开(公告)号：US11798987B2

公开(公告)日：2023-10-24

申请号：US17421379

申请日：2020-01-08

申请人： PARCAN NANOTECH CO., LTD.

发明人： Ivo Rangelow ,  Xiang-Qian Zhou ,  Dimitre Karpuzov

IPC分类号： H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/16 ,  H01L29/66 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L29/0657 ,  H01L21/266 ,  H01L21/26506 ,  H01L29/1602 ,  H01L29/6603 ,  H01L29/6609 ,  H01L29/66136 ,  H01L29/868 ,  H01L29/8611 ,  H01L2021/26573

摘要： The present invention is related to a substrate (10) for a controlled implantation of ions (80) into a bulk (20), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and a surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (10) of the bulk (20). Further, the present invention is related to a method of preparing a substrate (10) for a controlled implantation of ions (80) into a bulk (20), preferably the aforementioned substrate (10), the substrate (10) comprising the bulk (20) composed of a crystalline first material (70), the bulk (20) comprising an implantation region (28) and the surface (22), wherein the implantation region (28) is located within the bulk (20) and along an implantation direction (82) at an implantation depth (26) below an implantation area (24) on the surface (22) of the bulk (20).